CAPIZZI, Mario
 Distribuzione geografica
Continente #
NA - Nord America 14.436
EU - Europa 3.222
AS - Asia 1.868
SA - Sud America 158
AF - Africa 54
OC - Oceania 10
Continente sconosciuto - Info sul continente non disponibili 2
Totale 19.750
Nazione #
US - Stati Uniti d'America 14.312
UA - Ucraina 977
SG - Singapore 859
IT - Italia 588
IN - India 557
SE - Svezia 460
CN - Cina 402
FI - Finlandia 388
RU - Federazione Russa 271
GB - Regno Unito 235
DE - Germania 121
CA - Canada 109
AR - Argentina 106
IE - Irlanda 45
BR - Brasile 41
BG - Bulgaria 34
BE - Belgio 23
TG - Togo 23
ZA - Sudafrica 18
RO - Romania 17
FR - Francia 15
CH - Svizzera 14
MX - Messico 14
NL - Olanda 12
TR - Turchia 11
KR - Corea 8
NZ - Nuova Zelanda 7
AT - Austria 6
JP - Giappone 5
SC - Seychelles 5
CL - Cile 4
EG - Egitto 4
IL - Israele 4
AU - Australia 3
EC - Ecuador 3
GR - Grecia 3
ID - Indonesia 3
LT - Lituania 3
MA - Marocco 3
PK - Pakistan 3
AE - Emirati Arabi Uniti 2
BD - Bangladesh 2
ES - Italia 2
EU - Europa 2
LV - Lettonia 2
SA - Arabia Saudita 2
VE - Venezuela 2
VN - Vietnam 2
AF - Afghanistan, Repubblica islamica di 1
AZ - Azerbaigian 1
CO - Colombia 1
CR - Costa Rica 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
HK - Hong Kong 1
HU - Ungheria 1
KH - Cambogia 1
MY - Malesia 1
NO - Norvegia 1
NP - Nepal 1
PE - Perù 1
PL - Polonia 1
PT - Portogallo 1
TN - Tunisia 1
TW - Taiwan 1
UZ - Uzbekistan 1
Totale 19.750
Città #
Fairfield 2.165
Woodbridge 1.434
Houston 1.220
Ann Arbor 1.008
Chandler 926
Seattle 889
Ashburn 861
Wilmington 752
Cambridge 701
Singapore 481
Princeton 365
Jacksonville 364
Santa Clara 351
Plano 327
Boston 249
Rome 229
Lawrence 216
San Paolo di Civitate 215
Dearborn 206
Beijing 177
Boardman 139
San Diego 136
Federal 104
Des Moines 82
Andover 80
Millbury 78
Moscow 72
Toronto 63
Norwalk 58
Helsinki 48
Dublin 45
Hefei 40
Falkenstein 38
Ottawa 37
Southend 35
Sofia 33
Los Angeles 32
Falls Church 30
Nanjing 30
Bühl 29
New York 25
Mannheim 24
Yubileyny 24
Brussels 23
Lomé 23
Jinan 20
Lappeenranta 20
Auburn Hills 16
London 16
Buffalo 15
Kunming 15
Council Bluffs 12
Fuzhou 12
Muizenberg 12
San Mateo 11
Centrale 10
Indiana 10
Guangzhou 9
Istanbul 9
Redmond 9
Zhengzhou 9
Chengdu 8
Philadelphia 8
Bern 7
Gießen 7
Milan 7
Nanchang 7
Quzhou 7
Auckland 6
Fremont 6
Mexico City 6
Provo 6
Trieste 6
Trumbull 6
Wuhan 5
Basel 4
Florence 4
Hebei 4
Las Vegas 4
Mcallen 4
Montreal 4
Phoenix 4
Silverton 4
Xian 4
Cairo 3
Chicago 3
Chiswick 3
Dallas 3
Edinburgh 3
Kilburn 3
Mountain View 3
Newark 3
Ningbo 3
Riva 3
Shanghai 3
Tappahannock 3
Wenzhou 3
Yokohama 3
Baotou 2
Belo Horizonte 2
Totale 14.843
Nome #
H irradiation effects on the GaAs-like Raman modes in GaAs1-xNx/GaAs1-xNx:H planar heterostructures 122
Bandgap energy of wurtzite InAs nanowires 120
Defect Passivation by Hydrogen in III-V Semiconductor Epitaxial Films 117
Effect of lattice ionicity on hydrogen activity in II-VI materials containing isoelectronic oxygen impurities 111
Binding Energy and Lifetime of Excitons in InGaAs/GaAs Quantum Wells 108
Bi-induced p-type conductivity in nominally undoped Ga(AsBi) 108
INFRARED OPTICAL CONDUCTIVITY OF THE ND-CE-CU-O SYSTEM 104
Polarized Light Absorption in Wurtzite InP Nanowire Ensembles 103
Absorption Edge and Structural Phase Transition in SrTiO3 102
Structure and Reorientation of the Si_As-H and Zn_Ga-H Complexes in Gallium Arsenide 102
Hydrogen-donor-induced Free Exciton Splitting in GaAs 102
Hydrogenation of Stacked Self-Assembled InAs/GaAs Quantum Dots 102
Internally Detected Electron Photoexcitation Spectroscopy on Heterostructures 101
Strain-Narrowing of Excitons in Germanium 99
Quenching of Excitonic Lines in GaAs Due to Deuterium Accumulation at the Epilayer/Substrate Interface 98
Optical gap of strontium titanate (Deviation from urbach tail behavior) 98
A micrometer-size movable light emitting area in a resonant tunneling light emitting diode 98
Shallow and Deep Radiative Levels of H Complexes in GaAs 97
REORIENTATION OF THE B-H COMPLEX IN SILICON BY ANELASTIC RELAXATION EXPERIMENTS 96
Observation of the approach to a polarization catastrophe 95
An all optical mapping of the strain field in GaAsN/GaAsN:H wires 95
Determination of the Mass-Anisotropy Exciton Splitting in Silicon 93
Polaron Imprints in the Infrared Spectra of Nd2CuO4-y 93
Theory of Phosphorus-Hydrogen Complexes in Passivated Silicon 92
Polaronic optical absorption in semiconducting and superconducting oxides 92
Determination of the Nature of the Optical Gap of SrTiO3 91
Structural and vibrational properties of the Si-H-Al complex in crystalline silicon 91
Spatially selective hydrogen irradiation of dilute nitride semiconductors: a brief review 91
Temperature Dependence of the Band-gap in (InGa)(AsN)/GaAs Single Quantum Wells 90
Behavior of hydrogen in InN investigated in real time exploiting spectroscopic ellipsometry 90
InGaAs quantum dot excited states as determined by microphotoluminescence and resonant photoluminescence 90
Determination of Exciton Reduced Mass and Gyromagnetic Factor of Wurtzite (InGa)As Nanowires by Photoluminescence Spectroscopy under High Magnetic Fields 90
Magnetophotoluminescence studies of InxGa1-xAs1-yNy: A measurement of the electron effective mass, exciton size, and degree of carrier localization 89
SILICON-HYDROGEN-ACCEPTOR COMPLEXES IN CRYSTALLINE SILICON 88
Carrier masses and band-gap temperature sensitivity in Ga(AsBi) alloys 88
Oblique Grain Boundaries: Analysis of Light and Electron Beam Induced Current Profiles in Silicon 88
Indirect recombination mechanisms in germanium 87
Excitonic recombination and absorption in InxGa1-xAs/GaAs heterostructure nanowires 87
Carrier Transfer between InGaAs/GaAs Quantum Wells Separated by Thick Barriers 87
Evidence of a New Hydrogen Complex in Dilute Nitride Alloys 87
Hydrogen Induced States near the GaAs Band-edges 86
Fourier Transform Analysis of Light Beam Induced Current Profiles 86
Effects Of Hydrogen Irradiation On The Optical And Electronic Properties Of Site-controlled InGaAsN V-groove Quantum Wires 86
Polarons in the Infrared Spectra of High-Tc Materials 86
Polaron Formation in Superconducting Cuprates: Evidence from the Infrared Reflectivity 86
Near-edge States Induced by Hydrogen Inclusion in Gallium Arsenide 85
Si-P-H Complexes in Crystal Silicon: a Theoretical Study 84
Electron-Hole Plasma Diffusion in Direct-Gap Semiconductors?" 84
Optical and Precursive Properties Approaching the Metal to Insulator Transition in Highly Doped Si 84
Volume and Surface Effects in the Luminescence Decay of Electron-Hole Drops in Ge 84
Carrier mass measurements in degenerate indium nitride 84
Infrared optical properties of perovskite substrates for high-Tc superconducting films 84
Optical study of interacting donors in semiconductors 83
Deep levels in H-irradiated GaAs1-xNx (x < 0.01) grown by molecular beam epitaxy 83
Carrier Thermal Escape and Retrapping in Self Assembled Quantum Dots 83
Critical temperature for the conversion from wurtzite to zincblende of the optical emission of InAs nanowires 83
Infrared Reflectivity of Bi-Sr-Ca-Cu-O High-Tc Superconductors 83
Electron mass in dilute nitrides and its anomalous dependence on hydrostatic pressure 83
Mott distortion of the electron-hole fluid phase diagram 81
Electron-Hole Plasma in Direct-Gap Ga1-xAlxAs and k-Selection Rule 81
Observation of a Donor Exciton Band in Silicon 81
Effect of thermal annealing on defects in post-growth hydrogenated GaNP 81
Genesis of "solitary Cations" Induced by Atomic Hydrogen 80
High Tc Superconducting Thin Film: An Analysis of Reflectance Spectra 79
Uniaxially stressed silicon: Fine structure of the exciton and deformation potentials 79
Vibrational Frequencies of Si-P-H Complexes in Crystalline Silicon: a Theoretical Study 79
Magneto-photoluminescence studies in (InGa)(AsN)/GaAs heterostructures 79
Excitation Transfer through Thick Barriers in Asymmetric Double Quantum Well Structures 79
Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1−xNx intercalated GaAs/GaAs1−xNx:H heterostructures 79
a-Si1-xGex:H Alloys for Solar Cells 79
Temperature dependence of interband transitions in wurtzite InP nanowires 79
Hydrostatic pressure experiments on dilute nitride alloys 79
Band-gap profiling by laser writing of hydrogen-containing III-N-Vs 79
Structure, Kinetics and Passivation of Hydrogen-acceptor Complexes in Gallium Arsenide: a Theoretical Study 78
Formation and dissolution of D-N complexes in dilute nitrides 78
HYDROGEN PASSIVATION OF INTERFACE DEFECTS IN GAAS/ALAS SHORT-PERIOD SUPERLATTICES 78
Broadband enhancement of light-matter interaction in photonic crystal cavities integrating site-controlled quantum dots 78
Effects of hydrogen irradiation on the optical and electronic properties of site-controlled InGaAsN V-groove quantum wires 78
Infrared Evidence for the Cohexistence of Free and Bound Charges in Nd2-xCexCuO4 and Bi2Sr2CuO6 77
Hydrogen in Crystalline Silicon: a Deep Donor? 77
Site-Controlled Single-Photon Emitters Fabricated by Near-Field Illumination 77
Electron-Hole Plasma Expansion in Direct-Gap GaAs1-xPx 77
Atomic ordering in (InGa)(AsN) quantum wells: An in K-edge x-ray absorption investigation 77
PICOSECOND SPECTROSCOPY OF HYDROGENATED MBE-GAAS 76
Tunable variation of the electron effective mass and exciton radius in hydrogenated GaAs1-xNx 76
FANO EFFECT IN THE a-b PLANE OF Nd-Ce-Cu-O: EVIDENCE OF PHONON INTERACTION WITH A POLARONIC BACKGROUND 76
Tuning of the optical properties of In-rich In[sub x]Ga[sub 1−x]N (x=0.82−0.49) alloys by light-ion irradiation at low energy 76
Nanoscale tailoring of the polarization properties of dilute-nitride semiconductors via H-assisted strain engineering 76
Hydrogen Ion-Beam Induced Changes in the Photoluminescence of GaSb/AlSb MQW Structure 75
Monodomain Strontium Titanate 75
Hydrogenation of GaSb/GaAs quantum rings 75
Optical Evidence of Polarons in Superconducting Cuprates 74
Distortion-Enhanced Optical Absorption in SrTiO3 at the Cubic-to-Tetragonal Transition 74
The Energy Gap and Two-Component Absorption in a High Tc Superconductor 74
Compositional evolution of Bi-induced acceptor states in GaAs1-xBix alloy 74
Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots 74
Atomic equilibrium concentrations in (InGa)As quantum dots 74
Effect of hydrogen incorporation temperature in in plane-engineered GaAsN/GaAsN:H heterostructures 74
EXCITON MODES IN QUANTUM BARRIERS 73
Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix 73
Totale 8.637
Categoria #
all - tutte 58.956
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 58.956


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.182 0 0 0 0 0 0 0 0 507 361 189 125
2020/20211.395 228 268 53 92 28 125 21 117 137 191 108 27
2021/20223.199 21 200 326 66 442 69 66 370 274 280 492 593
2022/20233.077 611 607 146 336 435 351 8 192 222 55 87 27
2023/2024896 62 189 40 49 56 48 14 37 1 169 97 134
2024/20251.546 188 152 149 83 220 268 220 203 63 0 0 0
Totale 19.984