The properties of InGaAsN V-groove quantum wires (QWRs) -both untreated and irradiated with atomic hydrogen- are probed via micro-magneto-photoluminescence (PL) and polarization-dependent PL. As generally observed in dilute-nitride materials, H irradiation is found to fully passivate nitrogen, thus allowing us to accurately assess -and to precisely control- the effects of N incorporation in the QWRs. © 2013 AIP Publishing LLC.
Effects Of Hydrogen Irradiation On The Optical And Electronic Properties Of Site-controlled InGaAsN V-groove Quantum Wires / Felici, Marco; Pettinari, Giorgio; Polimeni, Antonio; R., Carron; G., Lavenuta; E., Tartaglini; DE LUCA, Marta; A., Notargiacomo; D., Fekete; P., Gallo; B., Dwir; A., Rudra; P. C. M., Christianen; J. C., Maan; Capizzi, Mario; E., Kapon. - In: AIP CONFERENCE PROCEEDINGS. - ISSN 0094-243X. - STAMPA. - 1566:(2013), pp. 5-6. (Intervento presentato al convegno 31st International Conference on the Physics of Semiconductors (ICPS) tenutosi a Zurich; Switzerland nel JUL 29-AUG 03, 2012) [10.1063/1.4848257].
Effects Of Hydrogen Irradiation On The Optical And Electronic Properties Of Site-controlled InGaAsN V-groove Quantum Wires
FELICI, Marco;PETTINARI, GIORGIO;POLIMENI, Antonio;DE LUCA, MARTA;CAPIZZI, Mario;
2013
Abstract
The properties of InGaAsN V-groove quantum wires (QWRs) -both untreated and irradiated with atomic hydrogen- are probed via micro-magneto-photoluminescence (PL) and polarization-dependent PL. As generally observed in dilute-nitride materials, H irradiation is found to fully passivate nitrogen, thus allowing us to accurately assess -and to precisely control- the effects of N incorporation in the QWRs. © 2013 AIP Publishing LLC.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.