Catalogo dei prodotti della ricerca

Age dependent metabolic and structural brain alterations after ROCK inhibition in mice

A front-end circuit in 28 nm CMOS for hydrogenated amorphous silicon detectors in clinical dosimetry

This paper presents the design and the characterization of a front-end circuit, designed in 28 nm CMOS, for real-time dosimetry in radiation diagnostics and radiation therapy. The front-end circuit is optimized for sensors made of hydrogenated amorphous silicon. The scheme is based on a current-to-frequency converter to sustain a large range of input currents. Three different programmable solutions have been investigated to be compatible with a wide variety of sensor sizes and applications. T...

Effect of intrinsic layer thickness on the performances of amorphous silicon P-I-N junction

Hydrogenated amorphous silicon (a-Si:H) p-type/intrinsic/n-type junctions are widely used in thin film-based microelectronics. Recently, they have been investigated as photodiodes and temperature sensors integrated on a single glass substrate to develop lab-on-chip systems featuring compactness and lightweight. In such applications, a-Si:H photodiodes can detect chemiluminescence, bioluminescence or fluorescence. Depending on the wavelength to be revealed, the spectral response of the photose...

Characterization of the performance of hydrogenated amorphous silicon junction field-effect transistors as sensor preamplifier

This study focuses on an extensive investigation of the performance of hydrogenated amorphous silicon (a-Si:H) junction field-effect transistors (JFETs) as sensor preamplifier for Lab-on-Chip (LoC) applications. The integration of a-Si:H JFETs into LoC systems provides a compact and efficient solution for analog signal preamplification, crucial for accurate sensor data processing. By systematically varying the intrinsic and n-type layer thicknesses, we fabricated and characterized multiple JF...