We show that the dissociation of the N-H complex in hydrogenated III-N-Vs can be laser activated at temperatures that are significantly smaller than those (>200 degrees C) required for thermal dissociation due to a resonant photon absorption by the N-H complex. This phenomenon provides a mechanism for profiling the band-gap energy in the growth plane of the III-N-Vs with submicron spatial resolution and high energy accuracy; the profiles are erasable and the alloys can be rehydrogenated making any nanoscale in-plane band-gap profile rewritable.
Band-gap profiling by laser writing of hydrogen-containing III-N-Vs / N., Balakrishnan; Pettinari, Giorgio; O., Makarovsky; L., Turyanska; M. W., Fay; DE LUCA, Marta; Polimeni, Antonio; Capizzi, Mario; F., Martelli; S., Rubini; A., Patane. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 86:15(2012). [10.1103/physrevb.86.155307]
Band-gap profiling by laser writing of hydrogen-containing III-N-Vs
PETTINARI, GIORGIO;DE LUCA, MARTA;POLIMENI, Antonio;CAPIZZI, Mario;
2012
Abstract
We show that the dissociation of the N-H complex in hydrogenated III-N-Vs can be laser activated at temperatures that are significantly smaller than those (>200 degrees C) required for thermal dissociation due to a resonant photon absorption by the N-H complex. This phenomenon provides a mechanism for profiling the band-gap energy in the growth plane of the III-N-Vs with submicron spatial resolution and high energy accuracy; the profiles are erasable and the alloys can be rehydrogenated making any nanoscale in-plane band-gap profile rewritable.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
