Effect of thermal annealing on paramagnetic centers in post-growth hydrogenated GaN0.0081P0.9919 epilayer is examined by means of photoluminescence and optically detected magnetic resonance (ODMR) techniques. In recent studies, several Ga-interstitial (Gai) related centers were found to be activated by the presence of hydrogen in the hydrogenated GaNP alloys. These centers compete with near-band edge radiative recombination. Annealing at 400 °C in Ar-ambient is found to cause quenching of the Gai-related ODMR signals that were activated by post-growth hydrogenation. We tentatively ascribe this effect to dissociation of the H-Gai complexes and subsequent out-diffusion of H. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Effect of thermal annealing on defects in post-growth hydrogenated GaNP / D., Dagnelund; C. W., Tu; Polimeni, Antonio; Capizzi, Mario; W. M., Chen; I. A., Buyanova. - In: PHYSICA STATUS SOLIDI. C, CURRENT TOPICS IN SOLID STATE PHYSICS. - ISSN 1862-6351. - STAMPA. - 10:4(2013), pp. 561-563. [10.1002/pssc.201200353]
Effect of thermal annealing on defects in post-growth hydrogenated GaNP
POLIMENI, Antonio;CAPIZZI, Mario;
2013
Abstract
Effect of thermal annealing on paramagnetic centers in post-growth hydrogenated GaN0.0081P0.9919 epilayer is examined by means of photoluminescence and optically detected magnetic resonance (ODMR) techniques. In recent studies, several Ga-interstitial (Gai) related centers were found to be activated by the presence of hydrogen in the hydrogenated GaNP alloys. These centers compete with near-band edge radiative recombination. Annealing at 400 °C in Ar-ambient is found to cause quenching of the Gai-related ODMR signals that were activated by post-growth hydrogenation. We tentatively ascribe this effect to dissociation of the H-Gai complexes and subsequent out-diffusion of H. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
