InAs nanowires (NWs) have been grown on semi-insulating InAs (111)B substrates by metal–organic chemical vapor deposition catalyzed by 50, 100, and 150 nm-sized Au particles. The pure wurtzite (WZ) phase of these NWs has been attested by high-resolution transmission electron microscopy and selected area diffraction pattern measurements. Low temperature photoluminescence measurements have provided unambiguous and robust evidence of a well resolved, isolated peak at 0.477 eV, namely 59 meV higher than the band gap of ZB InAs. The WZ nature of this energy band has been demonstrated by high values of the polarization degree, measured in ensembles of NWs both as-grown and mechanically transferred onto Si and GaAs substrates, in agreement with the polarization selection rules for WZ crystals. The value of 0.477 eV found here for the bandgap energy of WZ InAs agrees well with theoretical calculations.

Bandgap energy of wurtzite InAs nanowires / Rota, Michele; Ameruddin, Amira S.; Fonseka, H. Aruni; Gao, Qiang; Mura, Francesco; Polimeni, Antonio; Miriametro, Antonio; Tan, H. Hoe; Jagadish, Chennupati; Capizzi, Mario. - In: NANO LETTERS. - ISSN 1530-6984. - 16:8(2016), pp. 5197-5203. [10.1021/acs.nanolett.6b02205]

Bandgap energy of wurtzite InAs nanowires

ROTA, MICHELE;Mura, Francesco;Polimeni, Antonio;Miriametro, Antonio;Capizzi, Mario
2016

Abstract

InAs nanowires (NWs) have been grown on semi-insulating InAs (111)B substrates by metal–organic chemical vapor deposition catalyzed by 50, 100, and 150 nm-sized Au particles. The pure wurtzite (WZ) phase of these NWs has been attested by high-resolution transmission electron microscopy and selected area diffraction pattern measurements. Low temperature photoluminescence measurements have provided unambiguous and robust evidence of a well resolved, isolated peak at 0.477 eV, namely 59 meV higher than the band gap of ZB InAs. The WZ nature of this energy band has been demonstrated by high values of the polarization degree, measured in ensembles of NWs both as-grown and mechanically transferred onto Si and GaAs substrates, in agreement with the polarization selection rules for WZ crystals. The value of 0.477 eV found here for the bandgap energy of WZ InAs agrees well with theoretical calculations.
bandgap energy; polarization degree; steady-state photoluminescence; Wurtzite InAs nanowires; Bioengineering; Chemistry (all); Materials Science (all); Condensed Matter Physics; Mechanical Engineering
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Bandgap energy of wurtzite InAs nanowires / Rota, Michele; Ameruddin, Amira S.; Fonseka, H. Aruni; Gao, Qiang; Mura, Francesco; Polimeni, Antonio; Miriametro, Antonio; Tan, H. Hoe; Jagadish, Chennupati; Capizzi, Mario. - In: NANO LETTERS. - ISSN 1530-6984. - 16:8(2016), pp. 5197-5203. [10.1021/acs.nanolett.6b02205]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/954234
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