Hydrogen incorporation in diluted nitride semiconductors dramatically modifies the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. We report a convergent beam electron-diffraction characterization of diluted nitride semiconductor-heterostructures patterned at a sub-micron scale and selectively exposed to hydrogen. We present a method to determine separately perpendicular mismatch and static disorder in pristine and hydrogenated heterostructures. The roles of chemical composition and strain on static disorder have been separately assessed.

Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1−xNx intercalated GaAs/GaAs1−xNx:H heterostructures / S., Frabboni; V., Grillo; G. C., Gazzadi; R., Balboni; Trotta, Rinaldo; Polimeni, Antonio; Capizzi, Mario; F., Martelli; S., Rubini; G., Guzzinati; F., Glas. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 101:11(2012), pp. 111912-1-111912-4. [10.1063/1.4752464]

Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1−xNx intercalated GaAs/GaAs1−xNx:H heterostructures

TROTTA, RINALDO;POLIMENI, Antonio;CAPIZZI, Mario;
2012

Abstract

Hydrogen incorporation in diluted nitride semiconductors dramatically modifies the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. We report a convergent beam electron-diffraction characterization of diluted nitride semiconductor-heterostructures patterned at a sub-micron scale and selectively exposed to hydrogen. We present a method to determine separately perpendicular mismatch and static disorder in pristine and hydrogenated heterostructures. The roles of chemical composition and strain on static disorder have been separately assessed.
2012
01 Pubblicazione su rivista::01a Articolo in rivista
Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1−xNx intercalated GaAs/GaAs1−xNx:H heterostructures / S., Frabboni; V., Grillo; G. C., Gazzadi; R., Balboni; Trotta, Rinaldo; Polimeni, Antonio; Capizzi, Mario; F., Martelli; S., Rubini; G., Guzzinati; F., Glas. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 101:11(2012), pp. 111912-1-111912-4. [10.1063/1.4752464]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/488345
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