Optical measurements of phosphorus-doped silicon yield a donor susceptibility which can be fitted with a critical form that extrapolates to a polarization catastrophe at the insulator-metal transition. The exponent is about twice classical predictions and demonstrates the quantum nature of the transition. © 1980 The American Physical Society.
Observation of the approach to a polarization catastrophe / Capizzi, Mario; G. A., Thomas; F., De Rosa; R. N., Bhatt; T. M., Rice. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - STAMPA. - 44:15(1980), pp. 1019-1022. [10.1103/physrevlett.44.1019]
Observation of the approach to a polarization catastrophe
CAPIZZI, Mario;
1980
Abstract
Optical measurements of phosphorus-doped silicon yield a donor susceptibility which can be fitted with a critical form that extrapolates to a polarization catastrophe at the insulator-metal transition. The exponent is about twice classical predictions and demonstrates the quantum nature of the transition. © 1980 The American Physical Society.File allegati a questo prodotto
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