The effects of low-energy irradiation by light ions (H and He) on the properties of In-rich InxGa1−xN alloys are investigated by optical and structural techniques. H-irradiation gives rise to a remarkable blue-shift of light emission and absorption edge energies. X-ray absorption measurements and first-principle calculations address the microscopic origin of these effects.
Tuning of the optical properties of In-rich In[sub x]Ga[sub 1−x]N (x=0.82−0.49) alloys by light-ion irradiation at low energy / DE LUCA, Marta; Pettinari, Giorgio; Polimeni, Antonio; Capizzi, Mario; Gianluca, Ciatto; Lucia, Amidani; Emiliano, Fonda; Federico, Boscherini; Francesco, Filippone; Aldo Amore, Bonapasta; Knübel, Andreas; Cimalla, Volker; Ambacher, Oliver; Aldo Amore, Bonapasta; Andreas, Knubel; Volker, Cimalla; Oliver, Ambacher; Damiano, Giubertoni; Massimo, Bersani. - In: AIP CONFERENCE PROCEEDINGS. - ISSN 0094-243X. - STAMPA. - 93:(2013), pp. 93-94. (Intervento presentato al convegno THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012 tenutosi a Zurich, Switzerland nel 29 July–3 August 2012) [10.1063/1.4848301].
Tuning of the optical properties of In-rich In[sub x]Ga[sub 1−x]N (x=0.82−0.49) alloys by light-ion irradiation at low energy
DE LUCA, MARTA;PETTINARI, GIORGIO;POLIMENI, Antonio;CAPIZZI, Mario;
2013
Abstract
The effects of low-energy irradiation by light ions (H and He) on the properties of In-rich InxGa1−xN alloys are investigated by optical and structural techniques. H-irradiation gives rise to a remarkable blue-shift of light emission and absorption edge energies. X-ray absorption measurements and first-principle calculations address the microscopic origin of these effects.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
