(InGa)(AsN) quantum wells are particularly interesting for applications in fiber optics based communications, since they permit to make lasers with emission at 1.3 and 1.55 mum, with good temperature stability. The aim of this work is to study the local environment of In by means of X-ray absorption fine structure. In particular, the site ordering around In will be investigated in order to understand the structural origin of the non-linear optical and electronic proprieties which characterize this alloy. Despite the low N concentration ( less than or equal to 5.2%) a significant contribution of In-N bonds to the signal is detected. The data provide evidence of a preferential distribution of N atoms around indium, as recently predicted via Monte Carlo simulations. Hydrogenation further enhances the increase in the number of In-N over In-As bonds. (C) 2002 Elsevier Science B.V. All rights reserved.
Atomic ordering in (InGa)(AsN) quantum wells: An in K-edge x-ray absorption investigation / G., Ciatto; F., Boscherini; F., D'Acapito; S., Mobilio; H. V. H. G., Baldassarri; Polimeni, Antonio; Capizzi, Mario; D., Gollub; A., Forchel. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS. - ISSN 0168-583X. - STAMPA. - 200:(2003), pp. 34-39. (Intervento presentato al convegno Spring Meeting of the European-Materials-Research-Society (E-MRS) tenutosi a STRASBOURG, FRANCE nel JUN 18-21, 2002) [10.1016/s0168-583x(02)01671-3].
Atomic ordering in (InGa)(AsN) quantum wells: An in K-edge x-ray absorption investigation
POLIMENI, Antonio;CAPIZZI, Mario;
2003
Abstract
(InGa)(AsN) quantum wells are particularly interesting for applications in fiber optics based communications, since they permit to make lasers with emission at 1.3 and 1.55 mum, with good temperature stability. The aim of this work is to study the local environment of In by means of X-ray absorption fine structure. In particular, the site ordering around In will be investigated in order to understand the structural origin of the non-linear optical and electronic proprieties which characterize this alloy. Despite the low N concentration ( less than or equal to 5.2%) a significant contribution of In-N bonds to the signal is detected. The data provide evidence of a preferential distribution of N atoms around indium, as recently predicted via Monte Carlo simulations. Hydrogenation further enhances the increase in the number of In-N over In-As bonds. (C) 2002 Elsevier Science B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
