We report on the fabrication of a micrometer-size movable light emitting area in a GaAs/AlAs quantum well resonant tunneling p-i-n diode. The spatial position of the micrometer-size light emitting area shifts linearly with increasing applied bias, up to 30 mu m for a bias increment of 0.2 V. Also, the simultaneous resonant tunneling injection of both electrons and holes into the quantum well states is achieved at specific positions of the diode, thus resulting in a tenfold increase of the electroluminescence intensity. (C) 2013 AIP Publishing LLC.
A micrometer-size movable light emitting area in a resonant tunneling light emitting diode / Pettinari, Giorgio; N., Balakrishnan; O., Makarovsky; R. P., Campion; Polimeni, Antonio; Capizzi, Mario; A., Patane. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 103:24(2013), pp. 241105-241105-4. [10.1063/1.4844975]
A micrometer-size movable light emitting area in a resonant tunneling light emitting diode
PETTINARI, GIORGIO;POLIMENI, Antonio;CAPIZZI, Mario;
2013
Abstract
We report on the fabrication of a micrometer-size movable light emitting area in a GaAs/AlAs quantum well resonant tunneling p-i-n diode. The spatial position of the micrometer-size light emitting area shifts linearly with increasing applied bias, up to 30 mu m for a bias increment of 0.2 V. Also, the simultaneous resonant tunneling injection of both electrons and holes into the quantum well states is achieved at specific positions of the diode, thus resulting in a tenfold increase of the electroluminescence intensity. (C) 2013 AIP Publishing LLC.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
