Dilute nitride GaAs1-xNx layers have been grown by molecular beam epitaxy with nitrogen concentration ranging from 0.2% to 0.8%. These samples have been studied before and after hydrogen irradiation by using standard deep level transient spectroscopy (DLTS) and high resolution Laplace DLTS techniques. The activation energy, capture cross section and density of the electron traps have been estimated and compared with results obtained in N-free as-grown and H-irradiated bulk GaAs. (C) 2011 American Institute of Physics. [doi:10.1063/1.3664823]
Deep levels in H-irradiated GaAs1-xNx (x < 0.01) grown by molecular beam epitaxy / M., Shafi; R. h., Mari; A., Khatab; M., Henini; Polimeni, Antonio; Capizzi, Mario; M., Hopkinson. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 110:12(2011), pp. 124508-124508-5. [10.1063/1.3664823]
Deep levels in H-irradiated GaAs1-xNx (x < 0.01) grown by molecular beam epitaxy
POLIMENI, Antonio;CAPIZZI, Mario;
2011
Abstract
Dilute nitride GaAs1-xNx layers have been grown by molecular beam epitaxy with nitrogen concentration ranging from 0.2% to 0.8%. These samples have been studied before and after hydrogen irradiation by using standard deep level transient spectroscopy (DLTS) and high resolution Laplace DLTS techniques. The activation energy, capture cross section and density of the electron traps have been estimated and compared with results obtained in N-free as-grown and H-irradiated bulk GaAs. (C) 2011 American Institute of Physics. [doi:10.1063/1.3664823]I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
