GaAsN/GaAsN:H heterostructures were made by an in-plane selective hydrogen incorporation controlled by H-opaque metallic masks. The strain field and hydrogen distributions in GaAsN micro-sized wires thus obtained have been mapped by an all optical procedure that combines micro-Raman scattering and photoreflectance spectroscopy. The strain field is related to the formation of N-H complexes along the hydrogen diffusion profile with an ensuing expansion of the GaAsN lattice whose patterning generates an anisotropic stress in the sample growth plane. These results highlight a powerful non-invasive tool to simultaneously determine both the H diffusion profile and the related strain field distribution.

An all optical mapping of the strain field in GaAsN/GaAsN:H wires / M., Geddo; E., Giulotto; M. S., Grandi; M., Patrini; Trotta, Rinaldo; Polimeni, Antonio; Capizzi, Mario; F., Martelli; S., Rubini. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 101:19(2012), pp. 191908-1-191908-4. [10.1063/1.4766285]

An all optical mapping of the strain field in GaAsN/GaAsN:H wires

TROTTA, RINALDO;POLIMENI, Antonio;CAPIZZI, Mario;
2012

Abstract

GaAsN/GaAsN:H heterostructures were made by an in-plane selective hydrogen incorporation controlled by H-opaque metallic masks. The strain field and hydrogen distributions in GaAsN micro-sized wires thus obtained have been mapped by an all optical procedure that combines micro-Raman scattering and photoreflectance spectroscopy. The strain field is related to the formation of N-H complexes along the hydrogen diffusion profile with an ensuing expansion of the GaAsN lattice whose patterning generates an anisotropic stress in the sample growth plane. These results highlight a powerful non-invasive tool to simultaneously determine both the H diffusion profile and the related strain field distribution.
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An all optical mapping of the strain field in GaAsN/GaAsN:H wires / M., Geddo; E., Giulotto; M. S., Grandi; M., Patrini; Trotta, Rinaldo; Polimeni, Antonio; Capizzi, Mario; F., Martelli; S., Rubini. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 101:19(2012), pp. 191908-1-191908-4. [10.1063/1.4766285]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/495545
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