CAPIZZI, Mario
 Distribuzione geografica
Continente #
NA - Nord America 172
EU - Europa 129
AS - Asia 53
AF - Africa 2
OC - Oceania 1
SA - Sud America 1
Totale 358
Nazione #
US - Stati Uniti d'America 170
IT - Italia 52
FR - Francia 20
CN - Cina 18
FI - Finlandia 14
SG - Singapore 12
DE - Germania 10
GB - Regno Unito 10
TH - Thailandia 7
ES - Italia 6
CZ - Repubblica Ceca 5
JP - Giappone 3
KR - Corea 3
RU - Federazione Russa 3
AZ - Azerbaigian 2
CA - Canada 2
IE - Irlanda 2
IN - India 2
TR - Turchia 2
ZA - Sudafrica 2
AU - Australia 1
BE - Belgio 1
CH - Svizzera 1
CO - Colombia 1
DK - Danimarca 1
HK - Hong Kong 1
ID - Indonesia 1
IQ - Iraq 1
IR - Iran 1
LT - Lituania 1
NL - Olanda 1
RO - Romania 1
SE - Svezia 1
Totale 358
Città #
Houston 21
Santa Cruz 16
Rome 15
Ashburn 14
Lappeenranta 11
Singapore 10
Buffalo 8
Fairfield 8
Seattle 8
Cambridge 7
Wilmington 6
Ann Arbor 5
Bangkok 5
Beijing 5
Woodbridge 5
Franois 4
Boardman 3
Columbus 3
Dallas 3
Nanjing 3
Bengaluru 2
Besançon 2
Büdelsdorf 2
Chicago 2
Chuncheon 2
Clearwater 2
Des Moines 2
Florence 2
Helsinki 2
Los Angeles 2
Mehmet Akif Ersoy 2
Modena 2
Mueang Samut Prakan 2
Muizenberg 2
Nakhchivan 2
New York 2
Passau 2
Riva 2
San Diego 2
Alicante 1
Auburn 1
Barranquilla 1
Boulder 1
Bremen 1
Brussels 1
Canterbury 1
Cork 1
Derry 1
Downers Grove 1
Dublin 1
Frederiksberg 1
Gallo 1
Grenoble 1
Groningen 1
Hamamatsu 1
Hangzhou 1
Hartford 1
Herndon 1
Jönköping 1
Kish 1
Lacon 1
Las Vegas 1
Liberty Lake 1
Milan 1
Milpitas 1
Newark 1
Norwalk 1
Ottawa 1
Paris 1
Patrang 1
Phoenix 1
Presque Isle 1
Princeton 1
Quartu Sant'Elena 1
Redmond 1
Reston 1
Saint Albans 1
Scranton 1
Seoul 1
Shanghai 1
Shenzhen 1
Southampton 1
Stillwater 1
Toronto 1
Treviso 1
Urda 1
Verona 1
Wanchai 1
Wuhan 1
Yellow Springs 1
Totale 249
Nome #
Broadband enhancement of light-matter interaction in photonic crystal cavities integrating site-controlled quantum dots, file e3835326-3312-15e8-e053-a505fe0a3de9 211
Site-Controlled Quantum Emitters in Dilute Nitrides and their Integration in Photonic Crystal Cavities, file e3835321-b052-15e8-e053-a505fe0a3de9 107
Effects of hydrogen irradiation on the optical and electronic properties of site-controlled InGaAsN V-groove quantum wires, file e3835311-6eb1-15e8-e053-a505fe0a3de9 9
Resonant depletion of photogenerated carriers in InGaAs/GaAs nanowire mats, file e3835311-6eb3-15e8-e053-a505fe0a3de9 6
Effect of thermal annealing on defects in post-growth hydrogenated GaNP, file e3835311-6eb4-15e8-e053-a505fe0a3de9 5
Nonresonant hydrogen dopants in In(AsN): A route to high electron concentrations and mobilities, file e3835311-6eb2-15e8-e053-a505fe0a3de9 4
H irradiation effects on the GaAs-like Raman modes in GaAs1-xNx/GaAs1-xNx:H planar heterostructures, file e3835311-e921-15e8-e053-a505fe0a3de9 3
In-Plane Bandgap Engineering by Modulated Hydrogenation of Dilute Nitride Semiconductors, file e3835312-4fa0-15e8-e053-a505fe0a3de9 3
In-Plane Bandgap Engineering by Modulated Hydrogenation of Dilute Nitride Semiconductors, file e3835312-4f9f-15e8-e053-a505fe0a3de9 2
Site-Controlled Single-Photon Emitters Fabricated by Near-Field Illumination, file e383531d-f66b-15e8-e053-a505fe0a3de9 2
Strain related relaxation of the GaAs-like Raman mode selection rules in hydrogenated GaAs1−xNx layers, file e3835321-656c-15e8-e053-a505fe0a3de9 2
Nanoscale tailoring of the polarization properties of dilute-nitride semiconductors via H-assisted strain engineering, file e3835311-d254-15e8-e053-a505fe0a3de9 1
In(AsN) mid-infrared emission enhanced by rapid thermal annealing, file e3835311-d257-15e8-e053-a505fe0a3de9 1
Carrier masses and band-gap temperature sensitivity in Ga(AsBi) alloys, file e3835313-cb9a-15e8-e053-a505fe0a3de9 1
H-tailored surface conductivity in narrow band gap In(AsN), file e3835313-ce29-15e8-e053-a505fe0a3de9 1
Genesis of "solitary Cations" Induced by Atomic Hydrogen, file e3835313-cf3e-15e8-e053-a505fe0a3de9 1
Peculiarities of the hydrogenated In(AsN) alloy, file e3835313-d33d-15e8-e053-a505fe0a3de9 1
Bandgap energy of wurtzite InAs nanowires, file e3835317-168f-15e8-e053-a505fe0a3de9 1
Critical temperature for the conversion from wurtzite to zincblende of the optical emission of InAs nanowires, file e3835319-b414-15e8-e053-a505fe0a3de9 1
Temperature dependence of interband transitions in wurtzite InP nanowires, file e3835321-5dd9-15e8-e053-a505fe0a3de9 1
A lithographic approach for quantum dot-photonic crystal nanocavity coupling in dilute nitrides, file e3835321-b04b-15e8-e053-a505fe0a3de9 1
Spatially selective hydrogen irradiation of dilute nitride semiconductors: a brief review, file e3835321-b051-15e8-e053-a505fe0a3de9 1
Ferromagnetism and conductivity in Hydrogen irradiated co-doped ZnO thin films, file e383532a-6231-15e8-e053-a505fe0a3de9 1
Polarized Light Absorption in Wurtzite InP Nanowire Ensembles, file e383532c-5653-15e8-e053-a505fe0a3de9 1
Totale 367
Categoria #
all - tutte 705
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 705


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201913 0 0 0 0 0 0 0 0 0 0 4 9
2019/202027 4 2 1 1 3 2 3 2 3 2 3 1
2020/202169 1 11 1 4 16 3 5 4 12 5 3 4
2021/2022101 7 8 11 17 19 2 5 2 2 2 19 7
2022/202386 6 8 21 7 7 10 3 8 12 2 1 1
2023/202458 1 1 5 2 6 10 9 6 0 16 2 0
Totale 367