We show that the n-type conductivity of the narrow band gap In(AsN) alloy can be increased within a thin (similar to 100 nm) channel below the surface by the controlled incorporation of H-atoms. This channel has a large electron sheet density of similar to 10(18) m(-2) and a high electron mobility (mu > 0.1 m(2)V(-1)s(-1) at low and room temperature). For a fixed dose of impinging H-atoms, its width decreases with the increase in concentration of N-atoms that act as H-traps thus forming N-H donor complexes near the surface.
H-tailored surface conductivity in narrow band gap In(AsN) / Velichko, A. V; Patanè, A.; Capizzi, Mario; Sandall, I. C.; Giubertoni, D.; Makarovsky, O.; Polimeni, Antonio; Krier, A.; Zhuang, Q.; Tan, C. H.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 106:2(2015), p. 022111. [10.1063/1.4906111]
H-tailored surface conductivity in narrow band gap In(AsN)
CAPIZZI, Mario;POLIMENI, Antonio;
2015
Abstract
We show that the n-type conductivity of the narrow band gap In(AsN) alloy can be increased within a thin (similar to 100 nm) channel below the surface by the controlled incorporation of H-atoms. This channel has a large electron sheet density of similar to 10(18) m(-2) and a high electron mobility (mu > 0.1 m(2)V(-1)s(-1) at low and room temperature). For a fixed dose of impinging H-atoms, its width decreases with the increase in concentration of N-atoms that act as H-traps thus forming N-H donor complexes near the surface.| File | Dimensione | Formato | |
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