Photoluminescence excitation spectra of InGaAs in InGaAs/GaAs heterostructure nanowire mats show clear antiresonances at the critical points of the joint density of states of the GaAs barrier. This remarkable effect arises from resonant light absorption in the upper GaAs segments, with ensuing reduction of photogenerated carriers reaching the lower InGaAs segments. The extent of this effect depends strongly on the excitation geometry of the wires, as well as on their areal density. Our work suggests that a careful design is required for optimal light conversion in nanowire-based solar cell devices. © 2013 AIP Publishing LLC.

Resonant depletion of photogenerated carriers in InGaAs/GaAs nanowire mats / DE LUCA, Marta; Polimeni, Antonio; Felici, Marco; Antonio, Miriametro; Capizzi, Mario; Mura, Francesco; Silvia, Rubini; Faustino, Martelli. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 102:17(2013), pp. 173102-173102-5. [10.1063/1.4803476]

Resonant depletion of photogenerated carriers in InGaAs/GaAs nanowire mats

DE LUCA, MARTA;POLIMENI, Antonio;FELICI, Marco;CAPIZZI, Mario;Francesco Mura;
2013

Abstract

Photoluminescence excitation spectra of InGaAs in InGaAs/GaAs heterostructure nanowire mats show clear antiresonances at the critical points of the joint density of states of the GaAs barrier. This remarkable effect arises from resonant light absorption in the upper GaAs segments, with ensuing reduction of photogenerated carriers reaching the lower InGaAs segments. The extent of this effect depends strongly on the excitation geometry of the wires, as well as on their areal density. Our work suggests that a careful design is required for optimal light conversion in nanowire-based solar cell devices. © 2013 AIP Publishing LLC.
2013
01 Pubblicazione su rivista::01a Articolo in rivista
Resonant depletion of photogenerated carriers in InGaAs/GaAs nanowire mats / DE LUCA, Marta; Polimeni, Antonio; Felici, Marco; Antonio, Miriametro; Capizzi, Mario; Mura, Francesco; Silvia, Rubini; Faustino, Martelli. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 102:17(2013), pp. 173102-173102-5. [10.1063/1.4803476]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/515416
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