Far-infrared absorption measurements have been performed in nominally undoped GaAs1-xBix (0.6% <= x <= 10.6%) for magnetic field up to 30 T. For 0.6% <= x <= 4.5%, the Lyman series of an acceptor has been observed. An exceedingly high value of the ground-state g factor provides strong evidence of Bi-related acceptor states. For x >= 5.6%, however, these acceptors suddenly disappear. Such anomalous dependence on Bi concentration parallels those recently reported in GaAs1-xBix for other electronic and structural properties.
Compositional evolution of Bi-induced acceptor states in GaAs1-xBix alloy / Pettinari, Giorgio; H., Engelkamp; P. C. M., Christianen; J. C., Maan; Polimeni, Antonio; Capizzi, Mario; X., Lu; T., Tiedje. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 83:(2011), pp. 201201-201201. [10.1103/physrevb.83.201201]
Compositional evolution of Bi-induced acceptor states in GaAs1-xBix alloy
PETTINARI, GIORGIO;POLIMENI, Antonio;CAPIZZI, Mario;
2011
Abstract
Far-infrared absorption measurements have been performed in nominally undoped GaAs1-xBix (0.6% <= x <= 10.6%) for magnetic field up to 30 T. For 0.6% <= x <= 4.5%, the Lyman series of an acceptor has been observed. An exceedingly high value of the ground-state g factor provides strong evidence of Bi-related acceptor states. For x >= 5.6%, however, these acceptors suddenly disappear. Such anomalous dependence on Bi concentration parallels those recently reported in GaAs1-xBix for other electronic and structural properties.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
