The elastic energy loss between 60 and 300 K was measured in SiBxHy at frequencies between 2.4 and 32 kHz. A single-time relaxation process appears in the neighborhood of 130 K, which is due to the stress-induced jumps of H around B, with a relaxation time tau =[(8 +/- 4) X 10(-14)s] X exp[(0.22 +/- 0.01 eV)/kT]. The elastic interactions among the B-H complexes do not appear to affect the H jumps within the experimental error, and an upper limit of less than 10 meV is set for the random shifts of the H site energies due to such interactions.
REORIENTATION OF THE B-H COMPLEX IN SILICON BY ANELASTIC RELAXATION EXPERIMENTS / G., Cannelli; Cantelli, Rosario; Capizzi, Mario; Coluzza, Carlo; F., Cordero; Frova, Andrea; A., Lo Presi. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 44:20(1991), pp. 11486-11489. [10.1103/physrevb.44.11486]
REORIENTATION OF THE B-H COMPLEX IN SILICON BY ANELASTIC RELAXATION EXPERIMENTS
CANTELLI, Rosario;CAPIZZI, Mario;COLUZZA, Carlo;FROVA, Andrea;
1991
Abstract
The elastic energy loss between 60 and 300 K was measured in SiBxHy at frequencies between 2.4 and 32 kHz. A single-time relaxation process appears in the neighborhood of 130 K, which is due to the stress-induced jumps of H around B, with a relaxation time tau =[(8 +/- 4) X 10(-14)s] X exp[(0.22 +/- 0.01 eV)/kT]. The elastic interactions among the B-H complexes do not appear to affect the H jumps within the experimental error, and an upper limit of less than 10 meV is set for the random shifts of the H site energies due to such interactions.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
