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EnglishThe elastic energy loss between 60 and 300 K was measured in SiBxHy at frequencies between 2.4 and 32 kHz. A single-time relaxation process appears in the neighborhood of 130 K, which is due to the stress-induced jumps of H around B, with a relaxation time tau =[(8 +/- 4) X 10(-14)s] X exp[(0.22 +/- 0.01 eV)/kT]. The elastic interactions among the B-H complexes do not appear to affect the H jumps within the experimental error, and an upper limit of less than 10 meV is set for the random shifts of the H site energies due to such interactions.
http://hdl.handle.net/11573/15727| Titolo: | REORIENTATION OF THE B-H COMPLEX IN SILICON BY ANELASTIC RELAXATION EXPERIMENTS |
| Autori interni: | COLUZZA, Carlo CANTELLI, Rosario CAPIZZI, Mario FROVA, Andrea |
| Data di pubblicazione: | 1991 |
| Rivista: | PHYSICAL REVIEW. B, CONDENSED MATTER |
| Abstract: | The elastic energy loss between 60 and 300 K was measured in SiBxHy at frequencies between 2.4 and 32 kHz. A single-time relaxation process appears in the neighborhood of 130 K, which is due to the stress-induced jumps of H around B, with a relaxation time tau =[(8 +/- 4) X 10(-14)s] X exp[(0.22 +/- 0.01 eV)/kT]. The elastic interactions among the B-H complexes do not appear to affect the H jumps within the experimental error, and an upper limit of less than 10 meV is set for the random shifts of the H site energies due to such interactions. |
| Handle: | http://hdl.handle.net/11573/15727 |
| Appare nelle tipologie: | 01.a Pubblicazione su Rivista |
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