The elastic energy loss between 60 and 300 K was measured in SiBxHy at frequencies between 2.4 and 32 kHz. A single-time relaxation process appears in the neighborhood of 130 K, which is due to the stress-induced jumps of H around B, with a relaxation time tau =[(8 +/- 4) X 10(-14)s] X exp[(0.22 +/- 0.01 eV)/kT]. The elastic interactions among the B-H complexes do not appear to affect the H jumps within the experimental error, and an upper limit of less than 10 meV is set for the random shifts of the H site energies due to such interactions.
REORIENTATION OF THE B-H COMPLEX IN SILICON BY ANELASTIC RELAXATION EXPERIMENTS / G., Cannelli; Cantelli, Rosario; Capizzi, Mario; Coluzza, Carlo; F., Cordero; Frova, Andrea; A., Lo Presi. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 44:20(1991), pp. 11486-11489. [10.1103/physrevb.44.11486]
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Titolo: | REORIENTATION OF THE B-H COMPLEX IN SILICON BY ANELASTIC RELAXATION EXPERIMENTS | |
Autori: | ||
Data di pubblicazione: | 1991 | |
Rivista: | ||
Citazione: | REORIENTATION OF THE B-H COMPLEX IN SILICON BY ANELASTIC RELAXATION EXPERIMENTS / G., Cannelli; Cantelli, Rosario; Capizzi, Mario; Coluzza, Carlo; F., Cordero; Frova, Andrea; A., Lo Presi. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 44:20(1991), pp. 11486-11489. [10.1103/physrevb.44.11486] | |
Handle: | http://hdl.handle.net/11573/15727 | |
Appartiene alla tipologia: | 01a Articolo in rivista |