We present photoluminescence measurements under intense magnetic fields (B up to 30 T) in n-doped indium nitride samples with carrier concentration ranging from about 7.5x10(17) cm(-3) to 5x10(18) cm(-3). The observation of transitions involving several Landau levels permits to determine the carrier-reduced mass mu around the Gamma point. Depending on the carrier concentration, we find mu ranging between 0.093m(0) and 0.107m(0) (m(0) is the electron mass in vacuum). This finding poses a lower limit to the electron effective mass, whose unexpectedly large value (m(e)>= 0.093m(0)) indicates that the sources of n doping in InN perturb strongly the crystal conduction band near its minimum.
Carrier mass measurements in degenerate indium nitride / G., Pettinari; Polimeni, Antonio; Capizzi, Mario; J. H., Blokland; P. C. M., Christianen; J. C., Maan; V., Lebedev; V., Cimalla; O., Ambacher. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 79:16(2009), pp. 165207-1-165207-5. [10.1103/physrevb.79.165207]
Carrier mass measurements in degenerate indium nitride
POLIMENI, Antonio;CAPIZZI, Mario;
2009
Abstract
We present photoluminescence measurements under intense magnetic fields (B up to 30 T) in n-doped indium nitride samples with carrier concentration ranging from about 7.5x10(17) cm(-3) to 5x10(18) cm(-3). The observation of transitions involving several Landau levels permits to determine the carrier-reduced mass mu around the Gamma point. Depending on the carrier concentration, we find mu ranging between 0.093m(0) and 0.107m(0) (m(0) is the electron mass in vacuum). This finding poses a lower limit to the electron effective mass, whose unexpectedly large value (m(e)>= 0.093m(0)) indicates that the sources of n doping in InN perturb strongly the crystal conduction band near its minimum.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
