POLIMENI, Antonio
 Distribuzione geografica
Continente #
NA - Nord America 16.301
AS - Asia 7.877
EU - Europa 4.848
SA - Sud America 1.013
AF - Africa 237
OC - Oceania 15
Continente sconosciuto - Info sul continente non disponibili 4
Totale 30.295
Nazione #
US - Stati Uniti d'America 15.977
SG - Singapore 3.291
IT - Italia 1.672
CN - Cina 1.345
VN - Vietnam 949
IN - India 760
BR - Brasile 752
HK - Hong Kong 681
UA - Ucraina 605
DE - Germania 495
FI - Finlandia 479
SE - Svezia 401
FR - Francia 311
RU - Federazione Russa 248
GB - Regno Unito 230
CA - Canada 186
BD - Bangladesh 164
AR - Argentina 126
IQ - Iraq 90
MX - Messico 81
ID - Indonesia 77
JP - Giappone 77
ZA - Sudafrica 71
KR - Corea 65
PK - Pakistan 62
TR - Turchia 56
IE - Irlanda 53
PL - Polonia 53
NL - Olanda 51
ES - Italia 49
AT - Austria 42
EC - Ecuador 38
SA - Arabia Saudita 29
VE - Venezuela 28
MA - Marocco 27
JO - Giordania 25
CH - Svizzera 24
UZ - Uzbekistan 24
BG - Bulgaria 23
PH - Filippine 23
RO - Romania 22
BE - Belgio 21
EG - Egitto 21
PY - Paraguay 21
KE - Kenya 20
TH - Thailandia 17
AZ - Azerbaigian 16
TG - Togo 16
CO - Colombia 14
JM - Giamaica 14
LT - Lituania 14
MY - Malesia 14
OM - Oman 14
CI - Costa d'Avorio 13
CL - Cile 13
TN - Tunisia 13
AE - Emirati Arabi Uniti 12
TW - Taiwan 12
KZ - Kazakistan 11
AU - Australia 10
DZ - Algeria 10
UY - Uruguay 10
AL - Albania 9
ET - Etiopia 9
IL - Israele 9
IR - Iran 9
PS - Palestinian Territory 8
TT - Trinidad e Tobago 8
CZ - Repubblica Ceca 7
LB - Libano 7
SN - Senegal 7
BO - Bolivia 6
NG - Nigeria 6
NP - Nepal 6
CG - Congo 5
CR - Costa Rica 5
GT - Guatemala 5
HU - Ungheria 5
NZ - Nuova Zelanda 5
RS - Serbia 5
SC - Seychelles 5
SI - Slovenia 5
DO - Repubblica Dominicana 4
PA - Panama 4
PE - Perù 4
AM - Armenia 3
EE - Estonia 3
KH - Cambogia 3
KW - Kuwait 3
LV - Lettonia 3
MT - Malta 3
PT - Portogallo 3
QA - Qatar 3
TC - Turks e Caicos 3
BH - Bahrain 2
BY - Bielorussia 2
DK - Danimarca 2
EU - Europa 2
GA - Gabon 2
GR - Grecia 2
Totale 30.250
Città #
Fairfield 1.952
Singapore 1.695
Ashburn 1.444
Woodbridge 1.147
Houston 967
Seattle 784
San Jose 782
Chandler 760
Hong Kong 659
Cambridge 637
Wilmington 634
Rome 607
Ann Arbor 568
Santa Clara 382
Princeton 364
Beijing 320
Ho Chi Minh City 311
Dallas 276
Los Angeles 264
Plano 249
Jacksonville 244
Hanoi 243
Dearborn 238
Lauterbourg 227
Lawrence 219
Boston 210
Munich 184
Buffalo 182
The Dalles 180
San Paolo di Civitate 151
Frankfurt am Main 142
San Diego 139
Helsinki 132
Milan 123
New York 105
Millbury 89
Council Bluffs 78
Boardman 73
São Paulo 73
Toronto 73
Andover 69
Lappeenranta 66
Hefei 65
Moscow 63
Federal 62
Chicago 57
Tokyo 56
Dublin 48
Norwalk 47
Cosenza 44
Da Nang 44
Atlanta 42
Turku 42
Des Moines 41
Jakarta 41
Johannesburg 41
Nanjing 41
Ottawa 40
London 39
Baghdad 38
Warsaw 38
Montreal 37
Falkenstein 36
Guangzhou 36
Haiphong 34
Redondo Beach 34
Falls Church 33
Miano 33
Hillsboro 32
Nuremberg 32
Clementon 30
Phoenix 29
Orem 28
Bengaluru 27
Shanghai 27
Kunming 26
Lahore 26
Dhaka 25
Istanbul 24
Rio de Janeiro 24
Columbus 22
Sofia 22
Amman 21
Denver 21
Jinan 21
Mexico City 21
Vienna 21
Bühl 20
Stockholm 19
Tashkent 19
Brooklyn 18
Hải Dương 18
Mannheim 18
Nairobi 18
Zhengzhou 18
Belo Horizonte 17
Chennai 17
Poplar 17
Salt Lake City 17
Yubileyny 17
Totale 19.886
Nome #
Electronic properties of wurtzite-phase InP nanowires determined by optical and magneto-optical spectroscopy 299
Hydrogen-induced passivation of nitrogen in GaAs1-yNy 287
Evidence of the direct-to-indirect band gap transition in strained two-dimensional WS2, MoS2, and WSe2 194
Long-lived hot carriers in III-V nanowires 189
Bandgap energy of wurtzite InAs nanowires 184
Polarized Light Absorption in Wurtzite InP Nanowire Ensembles 178
Controlled micro/nanodome formation in proton-irradiated bulk transition-metal dichalcogenides 177
Towards free-standing graphane: Atomic hydrogen and deuterium bonding to nano-porous graphene 175
Azetidinium lead iodide: synthesis, structural and physico-chemical characterization 175
Homogeneous spatial distribution of Deuterium chemisorbed on free-standing graphene 173
Effect of lattice ionicity on hydrogen activity in II-VI materials containing isoelectronic oxygen impurities 166
Bi-induced p-type conductivity in nominally undoped Ga(AsBi) 166
InP–InxGa1−xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3–1.55 μm wavelength range 166
Hole and Electron Effective Masses in Single InP Nanowires with a Wurtzite-Zincblende Homojunction 164
Vibrational Properties in Highly Strained Hexagonal Boron Nitride Bubbles 164
A lithographic approach for quantum dot-photonic crystal nanocavity coupling in dilute nitrides 162
H irradiation effects on the GaAs-like Raman modes in GaAs1-xNx/GaAs1-xNx:H planar heterostructures 161
Broadband enhancement of light-matter interaction in photonic crystal cavities integrating site-controlled quantum dots 161
Brightly Luminescent and Moisture Tolerant Phenyl Viologen Lead Iodide Perovskites for Light Emission Applications 159
Spatially controlled single photon emitters in hBN-capped WS2 domes 156
Binding Energy and Lifetime of Excitons in InGaAs/GaAs Quantum Wells 156
Deuterium adsorption on free-standing graphene 155
Determination of exciton reduced mass and gyromagnetic factor of wurtzite (InGa) as nanowires by photoluminescence spectroscopy under high magnetic fields 152
An all optical mapping of the strain field in GaAsN/GaAsN:H wires 151
Effects Of Hydrogen Irradiation On The Optical And Electronic Properties Of Site-controlled InGaAsN V-groove Quantum Wires 149
Addressing the Fundamental Electronic Properties of Wurtzite GaAs Nanowires by High-Field Magneto-Photoluminescence Spectroscopy 148
Gap Opening in Double-Sided Highly Hydrogenated Free-Standing Graphene 148
Behavior of hydrogen in InN investigated in real time exploiting spectroscopic ellipsometry 146
A micrometer-size movable light emitting area in a resonant tunneling light emitting diode 145
Laser level scheme of self-interstitials in epitaxial Ge dots encapsulated in Si 145
Critical temperature for the conversion from wurtzite to zincblende of the optical emission of InAs nanowires 145
Common nonlinear features and spin-orbit coupling effects in the Zeeman splitting of novel wurtzite materials 145
Excitonic recombination and absorption in InxGa1-xAs/GaAs heterostructure nanowires 144
Site-Controlled Single-Photon Emitters Fabricated by Near-Field Illumination 140
Band-gap profiling by laser writing of hydrogen-containing III-N-Vs 139
Effects of hydrogen irradiation on the optical and electronic properties of site-controlled InGaAsN V-groove quantum wires 139
Spatially selective hydrogen irradiation of dilute nitride semiconductors: a brief review 138
Carrier masses and band-gap temperature sensitivity in Ga(AsBi) alloys 136
Dielectric response and excitations of hydrogenated free-standing graphene 136
Hydrogenation of Stacked Self-Assembled InAs/GaAs Quantum Dots 135
Unusual spin properties of InP wurtzite nanowires revealed by Zeeman splitting spectroscopy 135
Magneto-photoluminescence and electroluminescence spectroscopy of self-assembled (InGa)As quantum dots on high index planes 134
Tuning of the optical properties of In-rich In[sub x]Ga[sub 1−x]N (x=0.82−0.49) alloys by light-ion irradiation at low energy 133
3D island nucleation behaviour on high index substrates 132
Energy Distribution in Tin Halide Perovskite 131
Effect of hydrogen incorporation temperature in in plane-engineered GaAsN/GaAsN:H heterostructures 130
Alice (and Bob) in Flatland 129
Bandgap engineering across telecom wavelengths of InN nanowires by post-growth hydrogen irradiation 129
Magneto-optical properties of wurtzite-phase InP nanowires 129
Temperature dependence of interband transitions in wurtzite InP nanowires 129
Temperature Dependence of the Band-gap in (InGa)(AsN)/GaAs Single Quantum Wells 128
Nanoscale tailoring of the polarization properties of dilute-nitride semiconductors via H-assisted strain engineering 128
Resonant tunneling and photoluminescence spectroscopy in quantum wells containing self-assembled quantum dots 127
Genesis of "solitary Cations" Induced by Atomic Hydrogen 127
Evidence of a New Hydrogen Complex in Dilute Nitride Alloys 124
Atomic ordering in (InGa)(AsN) quantum wells: An in K-edge x-ray absorption investigation 124
Coupled Photonic Crystal Nanocavities as a Tool to Tailor and Control Photon Emission 123
Experimental Adhesion Energy in van der Waals Crystals and Heterostructures from Atomically Thin Bubbles 123
Localisation-to-delocalisation transition of moiré excitons in WSe2/MoSe2 heterostructures 122
Atomic deuterium bonding to multi-walled carbon nano tubes 122
Electron mass in dilute nitrides and its anomalous dependence on hydrostatic pressure 122
In0.5Ga0.5As quantum dot lasers grown on (100) and (311)B GaAs substrates 121
Nanoscale Measurements of Elastic Properties and Hydrostatic Pressure in H2-Bulged MoS2 Membranes 121
Magnetophotoluminescence studies of InxGa1-xAs1-yNy: A measurement of the electron effective mass, exciton size, and degree of carrier localization 120
Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states 120
Fine-tuning of the excitonic response in monolayer WS2 domes via coupled pressure and strain variation 119
Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1−xNx intercalated GaAs/GaAs1−xNx:H heterostructures 119
Spectromicroscopy study of induced defects in ion-bombarded highly aligned carbon nanotubes 118
Piezoelectric effects on the electron-hole dipole in In0.5Ga0.5As/GaAs self-assembled quantum dots 118
Strain-tuning of the electronic, optical, and vibrational properties of two-dimensional crystals 118
Effect of thermal annealing on defects in post-growth hydrogenated GaNP 117
Compositional evolution of Bi-induced acceptor states in GaAs1-xBix alloy 117
Optical properties of ZnSe, ZnCdSe and ZnSSe alloys doped with iron 116
Deep levels in H-irradiated GaAs1-xNx (x < 0.01) grown by molecular beam epitaxy 116
DEUTERIUM IN INGAAS/GAAS STRAINED QUANTUM-WELLS - AN OPTICALLY-ACTIVE IMPURITY 116
Atomic deuterium bonding to multi-walled carbon nano tubes 115
C2v nitrogen-hydrogen complexes in GaAsN revealed by X-ray absorption near-edge spectroscopy and ab initio simulations 115
Defect passivation in strain engineered InAs/(InGa)As quantum dots 115
N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy 115
Optical properties and laser applications of (InGa)As/(AlGa)As self-assembled quantum dots 115
Peculiarities of the hydrogenated In(AsN) alloy 115
Synthesis, structure, and characterization of 4,4′-(Anthracene-9,10-diylbis(ethyne-2,1-diyl))bis(1-methyl-1-pyridinium) Bismuth Iodide (C30H22N2)3Bi4I18, an air, water, and thermally stable 0D hybrid Perovskite with high photoluminescence efficiency 114
Controlled Band Gap Modulation of Hydrogenated Dilute Nitrides by SEM-Cathodoluminescence 114
Engineered Creation of Periodic Giant, Nonuniform Strains in MoS2 Monolayers 114
Exceptional Elasticity of Microscale Constrained MoS2Domes 114
Mechanical, Elastic, and Adhesive Properties of Two-Dimensional Materials: From Straining Techniques to State-of-the-Art Local Probe Measurements 114
Spectral analysis of InGaAs/GaAs quantum-dot lasers 113
Plasmon-assisted bandgap engineering in dilute nitrides 113
Hydrostatic pressure experiments on dilute nitride alloys 113
Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1-x alloys: A proof for a general property of dilute nitrides 113
Carrier mass measurements in degenerate indium nitride 112
Single Photons on Demand from Novel Site-Controlled GaAsN/GaAsN:H Quantum Dots 112
Optical and morphological properties of In(Ga)As/GaAs quantum dots grown on novel index surfaces 112
Absence of a Critical Thickness for the Self-aggregation of Quantum Dots in InAs/GaAs Quantum Wells 111
Site-Controlled Quantum Emitters in Dilute Nitrides and their Integration in Photonic Crystal Cavities 111
Single photon emitters in dilute nitrides: Towards a determinist approach of quantum dot-photonic crystal nanocavity coupling 111
Magneto-photoluminescence studies in (InGa)(AsN)/GaAs heterostructures 110
Compositional disorder in GaAs1–xNx:H investigated by photoluminescence 110
EXCITON MODES IN QUANTUM BARRIERS 110
Binding energy and lifetime of excitons in InxGa1-xAs/GaAs quantum wells 110
Totale 13.706
Categoria #
all - tutte 89.799
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 89.799


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202147 0 0 0 0 0 0 0 0 0 0 0 47
2021/20223.076 41 185 364 56 413 80 77 324 224 207 548 557
2022/20232.697 595 554 133 249 314 263 35 189 185 56 82 42
2023/20241.113 73 162 48 66 87 65 29 100 10 207 114 152
2024/20254.301 142 144 197 181 180 385 312 245 509 529 339 1.138
2025/202610.777 1.155 464 985 1.151 1.326 663 1.278 470 1.189 1.016 636 444
Totale 31.048