A comprehensive study is presented of the properties of ridge lasers incorporating In0.5Ca0.5As self-assembled quantum dots grown on (3 1 1)B and (1 0 0) oriented GaAs substrates. Various laser designs are used to optimize the threshold current density J(th) and the characteristic temperature T-0. Also, the effect of a thermal annealing of the samples is investigated as a mean of tuning the laser energy emission. Finally, we show an unusual temperature dependence of the laser emission: increasing temperature from 10 to 290 K produces a narrowing of the dot laser mode distribution. (C) 1999 Elsevier Science B.V. All rights reserved.
In0.5Ga0.5As quantum dot lasers grown on (100) and (311)B GaAs substrates / A., Patane; Polimeni, Antonio; M., Henini; L., Eaves; P. C., Main; G., Hill. - In: JOURNAL OF CRYSTAL GROWTH. - ISSN 0022-0248. - STAMPA. - 201:(1999), pp. 1139-1142. (Intervento presentato al convegno 10th International Conference on Molecular Beam Epitaxy (MBE-X) tenutosi a CANNES, FRANCE nel AUG 31-SEP 04, 1998) [10.1016/s0022-0248(99)00003-2].
In0.5Ga0.5As quantum dot lasers grown on (100) and (311)B GaAs substrates
POLIMENI, Antonio;
1999
Abstract
A comprehensive study is presented of the properties of ridge lasers incorporating In0.5Ca0.5As self-assembled quantum dots grown on (3 1 1)B and (1 0 0) oriented GaAs substrates. Various laser designs are used to optimize the threshold current density J(th) and the characteristic temperature T-0. Also, the effect of a thermal annealing of the samples is investigated as a mean of tuning the laser energy emission. Finally, we show an unusual temperature dependence of the laser emission: increasing temperature from 10 to 290 K produces a narrowing of the dot laser mode distribution. (C) 1999 Elsevier Science B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
