We present experimental data on InAs epitaxial layers grown on (N11)GaAs substrates showing that the substrate orientation affects the critical thickness for the onset of quantum dot self-assembling. The samples under investigation were characterised via photoluminescence measurements. We observed a decrease of self-assembling critical coverage with increasing Miller index N of the substrate. The observed behaviour is induced in-island strain relaxation inhibition caused by the use of high index substrates for the growth. (C) 2000 Elsevier Science S.A. All rights reserved.
3D island nucleation behaviour on high index substrates / S., Sanguinetti; G., Chiantoni; E., Grilli; M., Guzzi; M., Henini; Polimeni, Antonio; A., Patane; L., Eaves; P. C., Main. - In: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. - ISSN 0921-5107. - STAMPA. - 74:1(2000), pp. 239-241. (Intervento presentato al convegno 3rd International Conference on Low Dimensional Structures and Devices (LDSD 99) tenutosi a ANTALYA, TURKEY nel SEP 15-17, 1999) [10.1016/s0921-5107(99)00568-1].
3D island nucleation behaviour on high index substrates
POLIMENI, Antonio;
2000
Abstract
We present experimental data on InAs epitaxial layers grown on (N11)GaAs substrates showing that the substrate orientation affects the critical thickness for the onset of quantum dot self-assembling. The samples under investigation were characterised via photoluminescence measurements. We observed a decrease of self-assembling critical coverage with increasing Miller index N of the substrate. The observed behaviour is induced in-island strain relaxation inhibition caused by the use of high index substrates for the growth. (C) 2000 Elsevier Science S.A. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
