The cause of the unusual spectral distribution, often observed in InGaAs/GaAs quantum-dot lasers, is investigated by analyzing the spectra from devices fabricated with different substrate thickness (100-400 mu m). Using a Fourier transform analysis to determine the optical path length, it is found that the measured modulation period correlates with the device thickness. Such a result provides evidence for spectral modulation mediated by the device structure rather than the quantum-dot material itself and is consistent with the idea that the modulation is due to a mode propagating in the transparent substrate. (C) 1999 American Institute of Physics. [S0003-6951(99)02741-2].
Spectral analysis of InGaAs/GaAs quantum-dot lasers / P. M., Smowton; E. J., Johnston; S. V., Dewar; P. J., Hulyer; H. D., Summers; A., Patane; Polimeni, Antonio; M., Henini. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 75:15(1999), pp. 2169-2171. [10.1063/1.124954]
Spectral analysis of InGaAs/GaAs quantum-dot lasers
POLIMENI, Antonio;
1999
Abstract
The cause of the unusual spectral distribution, often observed in InGaAs/GaAs quantum-dot lasers, is investigated by analyzing the spectra from devices fabricated with different substrate thickness (100-400 mu m). Using a Fourier transform analysis to determine the optical path length, it is found that the measured modulation period correlates with the device thickness. Such a result provides evidence for spectral modulation mediated by the device structure rather than the quantum-dot material itself and is consistent with the idea that the modulation is due to a mode propagating in the transparent substrate. (C) 1999 American Institute of Physics. [S0003-6951(99)02741-2].I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
