Optical and morphological properties of self assembled In(Ga)As/GaAs quantum dot systems, grown on high index (N11) substrates, for a wide range of orientations, coverages and compositions, are presented and reviewed. The use of high Miller index substrate orientations permits to intervene on major quantum dots properties such as shape, size distribution, transition energy and emission polarisation, thus opening a wide range of device design opportunities. (C) 1999 Elsevier Science Ltd. All rights reserved.
Optical and morphological properties of In(Ga)As/GaAs quantum dots grown on novel index surfaces / S., Sanguinetti; A., Miotto; S., Castiglioni; E., Grilli; M., Guzzi; M., Henini; Polimeni, Antonio; A., Patane; L., Eaves; P. C., Main. - In: MICROELECTRONICS JOURNAL. - ISSN 0959-8324. - STAMPA. - 30:4(1999), pp. 419-425. (Intervento presentato al convegno Proceedings of the 1998 3rd International Workshop on Growth, Characterization and Exploitation of Epitaxial Compound Semiconductors on Novel Index Surfaces (NIS-98) tenutosi a San Rafael, Spain nel 6 October 1998 through 9 October 1998) [10.1016/s0026-2692(98)00146-3].
Optical and morphological properties of In(Ga)As/GaAs quantum dots grown on novel index surfaces
POLIMENI, Antonio;
1999
Abstract
Optical and morphological properties of self assembled In(Ga)As/GaAs quantum dot systems, grown on high index (N11) substrates, for a wide range of orientations, coverages and compositions, are presented and reviewed. The use of high Miller index substrate orientations permits to intervene on major quantum dots properties such as shape, size distribution, transition energy and emission polarisation, thus opening a wide range of device design opportunities. (C) 1999 Elsevier Science Ltd. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
