LOGOTETA, Demetrio
 Distribuzione geografica
Continente #
AS - Asia 72
EU - Europa 58
NA - Nord America 39
SA - Sud America 4
OC - Oceania 1
Totale 174
Nazione #
SG - Singapore 66
US - Stati Uniti d'America 35
IT - Italia 29
DE - Germania 10
FR - Francia 8
BR - Brasile 4
IE - Irlanda 4
MX - Messico 4
CN - Cina 3
BG - Bulgaria 2
FI - Finlandia 2
IN - India 2
AU - Australia 1
CH - Svizzera 1
GB - Regno Unito 1
IR - Iran 1
LV - Lettonia 1
Totale 174
Città #
Singapore 41
Boardman 12
Rome 7
Santa Clara 6
Dublin 4
Aubergenville 3
Bologna 3
Catania 3
Alfortville 2
Americana 2
Beijing 2
Chandigarh 2
Lappeenranta 2
Lavagna 2
Monte San Giovanni Campano 2
Sofia 2
São Paulo 2
Vedelago 2
Arak 1
Council Bluffs 1
Florence 1
Fort Worth 1
London 1
Lucca 1
Mexico City 1
Naples 1
Paris 1
Prineville 1
Sydney 1
Valenzano 1
Zurich 1
Totale 112
Nome #
Substitutional p-type doping in NbS2 -MoS2 lateral heterostructures grown by MOCVD 19
(La,Ba)SnO3-based thin-film transistors. Large-signal model and scaling projections 13
alpha-As2Te3 as a platform for the exploration of the electronic band structure of single layer beta-tellurene 11
Dual-gated WTe2/MoSe2 van der Waals tandem solar cells 10
Anharmonic phonon-phonon scattering modeling of three-dimensional atomistic transport. An efficient quantum treatment 9
Envelope-function-based analysis of the dependence of shot noise on the gate voltage in disordered graphene samples 9
Quantum treatment of inelastic interactions for the modeling of nanowire field-effect transistors 8
A computational study of van der Waals tunnel transistors. Fundamental aspects and design challenges 8
Impact of momentum mismatch on 2D van der Waals tunnel field-effect transistors 8
Physically based diagonal treatment of polar optical phonons in III-V p-type double-gate transistors: comparison of InAs vs Ge and Si 7
Electronic band gap of van der Waals alpha-As2Te3 crystals 7
Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions 7
Anharmonic Phonon-Phonon Scattering Modeling of Three-Dimensional Atomistic Transport: An Efficient Quantum Treatment 7
Is the regime with shot noise suppression by a factor 1/3 achievable in semiconductor devices with mesoscopic dimensions? 6
Thermionic cooling devices based on resonant-tunneling AlGaAs/GaAs heterostructure 6
Drain-Backgate-Enhanced TFET Bases on In-Plane MoTe2/MoS2 Heterojunction 6
Assessment of the electrical performance of short channel InAs and strained Si nanowire FETs 6
Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors 6
A steep-slope MoS2-nanoribbon MOSFET based on an intrinsic cold-contact effect 6
Germanane MOSFET for subdeca nanometer high-performance technology nodes 6
Operation and design of van der Waals tunnel transistors. A 3-D quantum transport study 6
Simulation of transport and noise in large-area graphene devices 5
Physically based diagonal treatment of the self-energy of polar optical phonons. Performance assessment of III-V double-gate transistors 5
Design optimization of a THz receiver based on 60 nm complementary metal–oxide–semiconductor technology 5
Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors 5
A sinc-based approach for the solution of differential transport problems with periodic boundary conditions 5
Effect of boron doping on the characteristics of graphene FETs 4
Using gate voltages to tune the noise properties of a mesoscopic cavity 4
Impact of the gate and external insulator thickness on the static characteristics of ultra-scaled silicon nanowire FETs 4
Effect of imperfections on the tunneling enhancement phenomenon in symmetric double quantum dots 4
Counterintuitive behavior of simulated network's conductance analogous to the Braess paradox 4
Quantum treatment of phonon scattering for modeling of three-dimensional atomistic transport 4
Impact of the gate and insulator geometrical model on the static performance and variability of ultrascaled silicon nanowire FETs 4
null 4
High-performance solution of the transport problem in a graphene armchair structure with a generic potential 4
Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices 4
Numerical simulation of transport in large-area graphene-based devices 3
Armchair graphene nanoribbons: PT-symmetry breaking and exceptional points without dissipation 3
Symmetry-dependent conductance behavior in graphene-based double-dot structure 3
Thermionic cooling devices based on AlGaAs/GaAs heterostructures 3
Efficient numerical method to study the transport behavior of a graphene armchair nanoribbon in the presence of a generical potential using an envelope function approach 3
Robustness to gate imperfections of the tunneling enhancement effect in double quantum dots 3
Vertical transport in graphene-hexagonal boron nitride heterostructure devices 2
Numerical simulation of scanning gate spectroscopy in bilayer graphene in the Quantum Hall regime 2
Numerical solution of the Dirac equation for an armchair graphene nanoribbon in the presence of a transversally variable potential 2
Sinc-based method for an efficient solution in the direct space of quantum wave equations with periodic boundary conditions 2
Numerical simulation of shot noise in disordered graphene 2
Optimization and benchmarking of graphene-based heterostructure FETs 2
Transport and noise behavior of cascaded realistic tunnel barriers 2
Unraveling Quantum Hall Breakdown in Bilayer Graphene with Scanning Gate Microscopy 2
What can we really expect from 2D materials for electronic applications? 2
Totale 272
Categoria #
all - tutte 4.056
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.056


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2022/202363 0 0 0 0 0 0 0 0 54 2 1 6
2023/2024150 53 2 5 8 1 12 5 2 1 12 14 35
2024/202559 1 0 38 20 0 0 0 0 0 0 0 0
Totale 272