We present a numerical study aimed to benchmark short gate InAs nanowire-FETs (NW-FETs) against their strained Si (sSi) counterpart. Our full-quantum simulations focus on both gate-length scaling and device variability and include the impact of electron-phonon scattering and surface roughness (SR). Interestingly, we found that SR improves the subthreshold-voltage swing (SS) of short gate-length InAs devices by inducing a reduced source-to-drain tunneling. Hence, InAs NW-FETs exhibit a larger immunity to the roughness-induced degradation of the ON-current, whereas they suffer froma larger OFF-current and SS variabilitywith respect to the sSi ones. According to our results, InAs NW-FETs could compete with sSi NW-FETs only for very short gate lengths, when the device performance is significantly degraded, while for longer devices sSi NW-FETs remain a more effective and reliable choice due to the higher gate overdrive charge
Assessment of the electrical performance of short channel InAs and strained Si nanowire FETs / Grillet, C; Logoteta, D; Cresti, A; Pala, M G. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 64:5(2017), pp. 2425-2431. [10.1109/TED.2017.2679226]
Assessment of the electrical performance of short channel InAs and strained Si nanowire FETs
Logoteta D;
2017
Abstract
We present a numerical study aimed to benchmark short gate InAs nanowire-FETs (NW-FETs) against their strained Si (sSi) counterpart. Our full-quantum simulations focus on both gate-length scaling and device variability and include the impact of electron-phonon scattering and surface roughness (SR). Interestingly, we found that SR improves the subthreshold-voltage swing (SS) of short gate-length InAs devices by inducing a reduced source-to-drain tunneling. Hence, InAs NW-FETs exhibit a larger immunity to the roughness-induced degradation of the ON-current, whereas they suffer froma larger OFF-current and SS variabilitywith respect to the sSi ones. According to our results, InAs NW-FETs could compete with sSi NW-FETs only for very short gate lengths, when the device performance is significantly degraded, while for longer devices sSi NW-FETs remain a more effective and reliable choice due to the higher gate overdrive chargeFile | Dimensione | Formato | |
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