LOGOTETA, Demetrio
LOGOTETA, Demetrio
DIPARTIMENTO DI INGEGNERIA DELL'INFORMAZIONE, ELETTRONICA E TELECOMUNICAZIONI
(La,Ba)SnO3-based thin-film transistors. Large-signal model and scaling projections
2022 Mazziotti, F; Logoteta, D; Iannaccone, G
A computational study of van der Waals tunnel transistors. Fundamental aspects and design challenges
2015 Cao, J; Logoteta, D; Ozkaya, S; Biel, B; Cresti, A; Pala, M; Esseni, D
A sinc-based approach for the solution of differential transport problems with periodic boundary conditions
2013 Marconcini, P; Logoteta, D; Macucci, M
A steep-slope MoS2-nanoribbon MOSFET based on an intrinsic cold-contact effect
2019 Logoteta, Demetrio; Pala, Marco G.; Choukroun, Jean; Dollfus, Philippe; Iannaccone, Giuseppe
alpha-As2Te3 as a platform for the exploration of the electronic band structure of single layer beta-tellurene
2022 Khalil, L; Forcella, Pm; Kremer, G; Bisti, F; Chaste, J; Girard, Jc; Oehler, F; Pala, M; Dayen, Jf; Logoteta, D; Goerbig, M; Bertran, F; Le Fevre, P; Lhuillier, E; Rault, J; Pierucci, D; Profeta, G; Ouerghi, A
Anharmonic Phonon-Phonon Scattering Modeling of Three-Dimensional Atomistic Transport: An Efficient Quantum Treatment
2019 Lee, Y; Luisier, M; Logoteta, D; Cavassilas, N; Lanoo, M; Bescond, M
Anharmonic phonon-phonon scattering modeling of three-dimensional atomistic transport. An efficient quantum treatment
2018 Lee, Y; Bescond, M; Logoteta, D; Cavassilas, N; Lannoo, M; Luisier, M
Armchair graphene nanoribbons: PT-symmetry breaking and exceptional points without dissipation
2011 Fagotti, M; Bonati, Claudio; Logoteta, Demetrio; Marconcini, Paolo; Macucci, Massimo
Assessment of the electrical performance of short channel InAs and strained Si nanowire FETs
2017 Grillet, C; Logoteta, D; Cresti, A; Pala, M G
Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions
2020 Logoteta, Demetrio; Cao, J.; Pala, M.; Dollfus, P.; Lee, Y.; Iannaccone, Giuseppe
Counterintuitive behavior of simulated network's conductance analogous to the Braess paradox
2016 Toussaint, S; Logoteta, D; Pala, M; Bayot, V; Hackens, B
Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors
2021 Cao, Jiang; Wu, Yu; Zhang, Hao; Logoteta, Demetrio; Zhang, Shengli; Pala, Marco
Drain-Backgate-Enhanced TFET Bases on In-Plane MoTe2/MoS2 Heterojunction
2019 Choukroun, J; Logoteta, D; Pala, M; Dollfus, P
Dual-gated WTe2/MoSe2 van der Waals tandem solar cells
2018 Cavassilas, N; Logoteta, D; Lee, Youseung; Michelini, F; Lannoo, M; Bescond, Marc; Luisier, Mathieu
Effect of boron doping on the characteristics of graphene FETs
2012 Marconcini, Paolo; Cresti, Alessandro; Triozon, François; Biel, Blanca; Niquet, Yann Michel; Logoteta, Demetrio; Roche, Stephan
Effect of imperfections on the tunneling enhancement phenomenon in symmetric double quantum dots
2010 Totaro, M; Marconcini, Paolo; Logoteta, Demetrio; Macucci, Massimo; Whitney, Rs
Efficient numerical method to study the transport behavior of a graphene armchair nanoribbon in the presence of a generical potential using an envelope function approach
2012 Logoteta, Demetrio; Marconcini, Paolo
Electronic band gap of van der Waals alpha-As2Te3 crystals
2021 Khalil, L; Girard, Jc; Pierucci, D; Bisti, F; Chaste, J; Oehler, F; Greboval, C; Noumbe, Un; Dayen, Jf; Logoteta, D; Patriarche, G; Rault, J; Pala, M; Lhuillier, E; Ouerghi, A
Envelope-function-based analysis of the dependence of shot noise on the gate voltage in disordered graphene samples
2021 Marconcini, Paolo; Logoteta, Demetrio; Macucci, Massimo
Germanane MOSFET for subdeca nanometer high-performance technology nodes
2018 Brahma, M; Bescond, M; Logoteta, D; Ghosh, R K; Mahapatra, S