Perovskite oxides are extremely interesting for their possible use in high-mobility thin-film transistors (TFTs) suitable for high-performance large-area circuits. Here we present a semianalytical model of a recently fabricated TFT based on La-BaSnO3, and explore the possibilities for technology optimization and the intrinsic potential of the device concept for applications in transparent and flexible electronics. We show that La-BaSnO3 TFTs can outperform existing TFT device technologies through a detailed benchmarking exercise, and that these devices can be promising for display electronics and for a broader range of applications.

(La,Ba)SnO3-based thin-film transistors. Large-signal model and scaling projections / Mazziotti, F; Logoteta, D; Iannaccone, G. - In: PHYSICAL REVIEW APPLIED. - ISSN 2331-7019. - 17:1(2022), pp. 1-10. [10.1103/PhysRevApplied.17.014011]

(La,Ba)SnO3-based thin-film transistors. Large-signal model and scaling projections

Logoteta, D;
2022

Abstract

Perovskite oxides are extremely interesting for their possible use in high-mobility thin-film transistors (TFTs) suitable for high-performance large-area circuits. Here we present a semianalytical model of a recently fabricated TFT based on La-BaSnO3, and explore the possibilities for technology optimization and the intrinsic potential of the device concept for applications in transparent and flexible electronics. We show that La-BaSnO3 TFTs can outperform existing TFT device technologies through a detailed benchmarking exercise, and that these devices can be promising for display electronics and for a broader range of applications.
2022
transparent conducting oxides; perovskites; MOSFET
01 Pubblicazione su rivista::01a Articolo in rivista
(La,Ba)SnO3-based thin-film transistors. Large-signal model and scaling projections / Mazziotti, F; Logoteta, D; Iannaccone, G. - In: PHYSICAL REVIEW APPLIED. - ISSN 2331-7019. - 17:1(2022), pp. 1-10. [10.1103/PhysRevApplied.17.014011]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1683825
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