(La,Ba)SnO3-based thin-film transistors. Large-signal model and scaling projections

Perovskite oxides are extremely interesting for their possible use in high-mobility thin-film transistors (TFTs) suitable for high-performance large-area circuits. Here we present a semianalytical model of a recently fabricated TFT based on La-BaSnO3, and explore the possibilities for technology optimization and the intrinsic potential of the device concept for applications in transparent and flexible electronics. We show that La-BaSnO3 TFTs can outperform existing TFT device technologies through a detailed benchmarking exercise, and that these devices can be promising for display electronics and for a broader range of applications.