Two-dimensional (2D) semiconductors are promising channel materials for next-generation field-effect transistors (FETs) thanks to their unique mechanical properties and enhanced electrostatic control. However, the performance of these devices can be strongly limited by the scattering processes between carriers and phonons, usually occurring at high rates in 2D materials. Here, we use quantum transport simulations calibrated on first-principle computations to report on dissipative transport in antimonene and arsenene n-type FETs at the scaling limit. We show that the widely-used approximations of either ballistic transport or simple acoustic deformation potential scattering result in large overestimation of the ON current, due to neglecting the dominant intervalley and optical phonon scattering processes. We additionally investigate a recently proposed valley engineering strategy to improve the device performance by removing the valley degeneracy and suppressing most of the intervalley scattering channels via an uniaxial strain along the zigzag direction. The method is applicable to other similar 2D semiconductors characterized by multivalley transport.

Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors / Cao, Jiang; Wu, Yu; Zhang, Hao; Logoteta, Demetrio; Zhang, Shengli; Pala, Marco. - In: NPJ 2D MATERIALS AND APPLICATIONS. - ISSN 2397-7132. - 5:1(2021), pp. 1-8. [10.1038/s41699-021-00238-9]

Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors

Demetrio Logoteta;
2021

Abstract

Two-dimensional (2D) semiconductors are promising channel materials for next-generation field-effect transistors (FETs) thanks to their unique mechanical properties and enhanced electrostatic control. However, the performance of these devices can be strongly limited by the scattering processes between carriers and phonons, usually occurring at high rates in 2D materials. Here, we use quantum transport simulations calibrated on first-principle computations to report on dissipative transport in antimonene and arsenene n-type FETs at the scaling limit. We show that the widely-used approximations of either ballistic transport or simple acoustic deformation potential scattering result in large overestimation of the ON current, due to neglecting the dominant intervalley and optical phonon scattering processes. We additionally investigate a recently proposed valley engineering strategy to improve the device performance by removing the valley degeneracy and suppressing most of the intervalley scattering channels via an uniaxial strain along the zigzag direction. The method is applicable to other similar 2D semiconductors characterized by multivalley transport.
2021
two-dimensional materials; antimonene; arsenene; dissipative transport; field-effect transistor
01 Pubblicazione su rivista::01a Articolo in rivista
Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors / Cao, Jiang; Wu, Yu; Zhang, Hao; Logoteta, Demetrio; Zhang, Shengli; Pala, Marco. - In: NPJ 2D MATERIALS AND APPLICATIONS. - ISSN 2397-7132. - 5:1(2021), pp. 1-8. [10.1038/s41699-021-00238-9]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1683827
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