Ballistic transport in monolayer Germanane MOSFETs is investigated for high-performance (HP) applications. Characteristics of both n- and p-type transistors having channel lengths of 7, 5, and 3 nm are studied and compared against the International Technology Roadmap for Semiconductor (ITRS) target of 2028. Our simulation approach is based on a self-consistent quantum ballistic transport model within the framework of the nonequilibrium Green's function formalism and relies on a single-band and a two-band k p Hamiltonian for n- and p-type channels, respectively. We found that, even for a gate length scaled down to 3 nm, the ON current (ION) in n- and p-MOSFETs for a fixed OFF current IOFF =100 nA/μm is as high as 890 and 700 μA/μm, respectively. For longer channel lengths, the p-MOSFET can outperform the n-MOSFET in terms of ION requirements, as the direct source-to-drain tunneling gets suppressed. Other performance metrics, including gate capacitance, intrinsic switching delay, and switching energy, have also been calculated and found to be comparable to the ITRS 2028 HP technology requirements

Germanane MOSFET for subdeca nanometer high-performance technology nodes / Brahma, M; Bescond, M; Logoteta, D; Ghosh, R K; Mahapatra, S. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 65:3(2018), pp. 1198-1204. [10.1109/TED.2017.2788463]

Germanane MOSFET for subdeca nanometer high-performance technology nodes

Logoteta D;
2018

Abstract

Ballistic transport in monolayer Germanane MOSFETs is investigated for high-performance (HP) applications. Characteristics of both n- and p-type transistors having channel lengths of 7, 5, and 3 nm are studied and compared against the International Technology Roadmap for Semiconductor (ITRS) target of 2028. Our simulation approach is based on a self-consistent quantum ballistic transport model within the framework of the nonequilibrium Green's function formalism and relies on a single-band and a two-band k p Hamiltonian for n- and p-type channels, respectively. We found that, even for a gate length scaled down to 3 nm, the ON current (ION) in n- and p-MOSFETs for a fixed OFF current IOFF =100 nA/μm is as high as 890 and 700 μA/μm, respectively. For longer channel lengths, the p-MOSFET can outperform the n-MOSFET in terms of ION requirements, as the direct source-to-drain tunneling gets suppressed. Other performance metrics, including gate capacitance, intrinsic switching delay, and switching energy, have also been calculated and found to be comparable to the ITRS 2028 HP technology requirements
2018
2-D materials; ballistic transport; Germanane; International Technology Roadmap for Semiconductor (ITRS); nonequilibrium Green's function (NEGF) formalism
01 Pubblicazione su rivista::01a Articolo in rivista
Germanane MOSFET for subdeca nanometer high-performance technology nodes / Brahma, M; Bescond, M; Logoteta, D; Ghosh, R K; Mahapatra, S. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 65:3(2018), pp. 1198-1204. [10.1109/TED.2017.2788463]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1675119
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