Numerical simulation of shot noise in disordered graphene

Following the intriguing results analytically obtained for the shot noise suppression in wide and short graphene samples with doped contacts, efforts were made to achieve an experimental verification, and, while one experiment yielded a clear confirmation of the theory, another one provided data with no clear dependence of the Fano factor on gate voltage. This was attributed to the presence of a disordered potential. Here we perform a numerical study, based on an envelope function analysis, of disordered graphene samples with different aspect ratios, focusing in particular on the dependence of shot noise suppression on gate voltage. We conclude that such a dependence should survive, unless disorder with an unrealistically large amplitude is considered.