Physically based diagonal treatment of polar optical phonons in III-V p-type double-gate transistors: comparison of InAs vs Ge and Si / Moussavou, M; Bescond, M; Logoteta, D; Raymond, L; Cavassilas, N; Lannoo, M. - (2017). (Intervento presentato al convegno International Workshop on Computational Nanotechnology 2017 (IWCN 2017) tenutosi a Windermere (UK)).
Physically based diagonal treatment of polar optical phonons in III-V p-type double-gate transistors: comparison of InAs vs Ge and Si
Logoteta D;
2017
File allegati a questo prodotto
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
