PUZZILLI, Giuseppina
PUZZILLI, Giuseppina
A comprehensive model of oxide degradation
2005 Irrera, Fernanda; Caputo, Domenico; Puzzilli, Giuseppina
A New Reliable P/E Methodology for Fully Fowler-Nordheim Operating Non Volatile Memories
2005 Irrera, Fernanda; Puzzilli, Giuseppina
Characterisation of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C-V
2006 Puzzilli, Giuseppina; B., Govoreanu; Irrera, Fernanda; M., Rosmeulen; J., Van Houdt
Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C-V technique
2007 Puzzilli, Giuseppina; Govoreanu, B; Irrera, Fernanda; Rosmeulen, M; VAN HOUDT, J.
Crested barrier in the tunnel stack of non-volatile memories
2005 Irrera, Fernanda; Puzzilli, Giuseppina
Crested Barriers In The Tunnel Oxide Stack Of Non-Volatile Memories
2004 Irrera, Fernanda; Caputo, Domenico; Puzzilli, Giuseppina
Data retention of silicon nanocrystal storage nodes programmed with short voltage pulses
2006 Puzzilli, Giuseppina; Irrera, Fernanda
Degradation of ultra-thin oxides
2004 Irrera, Fernanda; Puzzilli, Giuseppina
Fast and reliable tunnel programming of nanocrystal nonvolatile memories
2004 Puzzilli, Giuseppina; Caputo, Domenico; Irrera, Fernanda
Improving floating-gate memory reliability by nanocrystal storage and pulsed tunnel programming
2004 Puzzilli, Giuseppina; Caputo, Domenico; Irrera, Fernanda; MONZIO COMPAGNONI, C; Ielmini, D; SPINELLI A., S; LACAITA A., L; Gerardi, C.
Is Pulsed Tunnel Programming suitable for Nanocrystals Floating Gate Memories?
2004 Puzzilli, Giuseppina; Caputo, Domenico; Irrera, Fernanda
Long time transient in hafnium oxide
2007 Puzzilli, Giuseppina; Irrera, Fernanda
Long time transients in hafnium oxide
2007 Puzzilli, Giuseppina; Irrera, Fernanda
Low-k dielectrics for STI in nanoscaled CMOS imagers
2008 Irrera, Fernanda; Puzzilli, Giuseppina; L., Ricci; F., Russo; F., Stirpe
Low-k dielectrics for trench isolation in nanoscaled CMOS imagers Journal of Vacuum Science Technology B, 27 (1) 2009
2009 Irrera, Fernanda; Puzzilli, Giuseppina; L., Ricci; F., Russo; F., Stirpe
On the RESET-SET transition in phase change memories
2008 Puzzilli, Giuseppina; Irrera, Fernanda; Andrea, Padovani; Paolo, Pavan; Luca, Larcher; Ankur, Arya; Vincenzo Della, Marca; Agostino, Pirovano
Reliability Improvements in 50 nm MLC NAND Flash Memory Using Short Voltage Programming Pulses
2009 Irrera, Fernanda; I., Piccoli; Puzzilli, Giuseppina; M., Rossini; T., Vali
T-shaped shallow trench isolation with an unfilled floating void
2008 Irrera, Fernanda; Puzzilli, Giuseppina; L., Ricci; F., Russo; F., Stirpe
Towards a viable high-k interpoly dielectric for aggressively scaled floating-gate Flash memory
2006 B., Govoreanu; D., Brunco; L., Haspeslagh; J., De Vos; D., Ruiz Aguado; P., Blomme; Puzzilli, Giuseppina; K., van der Zanden; Irrera, Fernanda; J., Van Houdt
Transient Behavior Of Hafnium Oxide
2006 Puzzilli, Giuseppina; F., Rori; D., Valli; Irrera, Fernanda
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
A comprehensive model of oxide degradation | 2005 | Irrera, Fernanda; Caputo, Domenico; Puzzilli, Giuseppina | |
A New Reliable P/E Methodology for Fully Fowler-Nordheim Operating Non Volatile Memories | 2005 | Irrera, Fernanda; Puzzilli, Giuseppina | |
Characterisation of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C-V | 2006 | Puzzilli, Giuseppina; B., Govoreanu; Irrera, Fernanda; M., Rosmeulen; J., Van Houdt | |
Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C-V technique | 2007 | Puzzilli, Giuseppina; Govoreanu, B; Irrera, Fernanda; Rosmeulen, M; VAN HOUDT, J. | |
Crested barrier in the tunnel stack of non-volatile memories | 2005 | Irrera, Fernanda; Puzzilli, Giuseppina | |
Crested Barriers In The Tunnel Oxide Stack Of Non-Volatile Memories | 2004 | Irrera, Fernanda; Caputo, Domenico; Puzzilli, Giuseppina | |
Data retention of silicon nanocrystal storage nodes programmed with short voltage pulses | 2006 | Puzzilli, Giuseppina; Irrera, Fernanda | |
Degradation of ultra-thin oxides | 2004 | Irrera, Fernanda; Puzzilli, Giuseppina | |
Fast and reliable tunnel programming of nanocrystal nonvolatile memories | 2004 | Puzzilli, Giuseppina; Caputo, Domenico; Irrera, Fernanda | |
Improving floating-gate memory reliability by nanocrystal storage and pulsed tunnel programming | 2004 | Puzzilli, Giuseppina; Caputo, Domenico; Irrera, Fernanda; MONZIO COMPAGNONI, C; Ielmini, D; SPINELLI A., S; LACAITA A., L; Gerardi, C. | |
Is Pulsed Tunnel Programming suitable for Nanocrystals Floating Gate Memories? | 2004 | Puzzilli, Giuseppina; Caputo, Domenico; Irrera, Fernanda | |
Long time transient in hafnium oxide | 2007 | Puzzilli, Giuseppina; Irrera, Fernanda | |
Long time transients in hafnium oxide | 2007 | Puzzilli, Giuseppina; Irrera, Fernanda | |
Low-k dielectrics for STI in nanoscaled CMOS imagers | 2008 | Irrera, Fernanda; Puzzilli, Giuseppina; L., Ricci; F., Russo; F., Stirpe | |
Low-k dielectrics for trench isolation in nanoscaled CMOS imagers Journal of Vacuum Science Technology B, 27 (1) 2009 | 2009 | Irrera, Fernanda; Puzzilli, Giuseppina; L., Ricci; F., Russo; F., Stirpe | |
On the RESET-SET transition in phase change memories | 2008 | Puzzilli, Giuseppina; Irrera, Fernanda; Andrea, Padovani; Paolo, Pavan; Luca, Larcher; Ankur, Arya; Vincenzo Della, Marca; Agostino, Pirovano | |
Reliability Improvements in 50 nm MLC NAND Flash Memory Using Short Voltage Programming Pulses | 2009 | Irrera, Fernanda; I., Piccoli; Puzzilli, Giuseppina; M., Rossini; T., Vali | |
T-shaped shallow trench isolation with an unfilled floating void | 2008 | Irrera, Fernanda; Puzzilli, Giuseppina; L., Ricci; F., Russo; F., Stirpe | |
Towards a viable high-k interpoly dielectric for aggressively scaled floating-gate Flash memory | 2006 | B., Govoreanu; D., Brunco; L., Haspeslagh; J., De Vos; D., Ruiz Aguado; P., Blomme; Puzzilli, Giuseppina; K., van der Zanden; Irrera, Fernanda; J., Van Houdt | |
Transient Behavior Of Hafnium Oxide | 2006 | Puzzilli, Giuseppina; F., Rori; D., Valli; Irrera, Fernanda |