In this brief, we applied the technique of pulsed Fowler-Nordheim programming to Flash memories with silicon nanocrystals as discrete storage nodes. The waveform was optimized with respect to program time and oxide reliability, starting from a systematic study of the trap dynamics. The goal of a fast programming was successfully achieved, with a slight increase of the program voltage, without degrading the stress-induced leakage current (SILC) and endurance.
Fast and reliable tunnel programming of nanocrystal nonvolatile memories / Puzzilli, Giuseppina; Caputo, Domenico; Irrera, Fernanda. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 51:7(2004), pp. 1205-1207. [10.1109/ted.2004.829898]
Fast and reliable tunnel programming of nanocrystal nonvolatile memories
PUZZILLI, Giuseppina;CAPUTO, Domenico;IRRERA, Fernanda
2004
Abstract
In this brief, we applied the technique of pulsed Fowler-Nordheim programming to Flash memories with silicon nanocrystals as discrete storage nodes. The waveform was optimized with respect to program time and oxide reliability, starting from a systematic study of the trap dynamics. The goal of a fast programming was successfully achieved, with a slight increase of the program voltage, without degrading the stress-induced leakage current (SILC) and endurance.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
