In this work characterization Of HfO2 films in transient regime is presented. Charge trapping and detrapping, and degradation transients were investigated at long times while monitoring gate current or voltage. As for charge trapping, a logarithmic dependence on time was found. The entity of the external perturbation inducing degradation was influenced by the HfO2 thickness. The detrapping rate was systematically studied as a function of pulse features and film thickness, and was found to depend only on the HfO2 thickness, with a power law behavior as a function of time.
Long time transients in hafnium oxide / Puzzilli, Giuseppina; Irrera, Fernanda. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - 84:9-10(2007), pp. 2394-2397. (Intervento presentato al convegno 15th Biennial Conference on Insulating Films on Semiconductors tenutosi a Glyfada Athens, GREECE nel JUN 20-23, 2007) [10.1016/j.mee.2007.04.064].
Long time transients in hafnium oxide
PUZZILLI, Giuseppina;IRRERA, Fernanda
2007
Abstract
In this work characterization Of HfO2 films in transient regime is presented. Charge trapping and detrapping, and degradation transients were investigated at long times while monitoring gate current or voltage. As for charge trapping, a logarithmic dependence on time was found. The entity of the external perturbation inducing degradation was influenced by the HfO2 thickness. The detrapping rate was systematically studied as a function of pulse features and film thickness, and was found to depend only on the HfO2 thickness, with a power law behavior as a function of time.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
