In this work charge trapping in SiO2/Al2O3 dielectric stacks is characterized by means of pulsed capacitance-voltage measurements. The proposed technique, strongly reduces the measurement time and, as a consequence, the impact of charge trapping on the measurement results. Flat band voltage shift and fast current transient during short stress pulses are systematically monitored and modeling is presented, which allows for the extraction of the amount and centroid of trapped charge
Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C-V technique / Puzzilli, Giuseppina; Govoreanu, B; Irrera, Fernanda; Rosmeulen, M; VAN HOUDT, J.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 47:(2007), pp. 508-512. [10.1016/j.microrel.2007.01.040]
Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C-V technique
PUZZILLI, Giuseppina;IRRERA, Fernanda;
2007
Abstract
In this work charge trapping in SiO2/Al2O3 dielectric stacks is characterized by means of pulsed capacitance-voltage measurements. The proposed technique, strongly reduces the measurement time and, as a consequence, the impact of charge trapping on the measurement results. Flat band voltage shift and fast current transient during short stress pulses are systematically monitored and modeling is presented, which allows for the extraction of the amount and centroid of trapped chargeI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
