We characterize SET operation in Phase Change Memories. A measurement procedure aiming to investigate resistance transition from amorphous to crystalline states is shown. Results give interesting insights on the crystallization process of GST material and a simple model is introduced. Crystallization process obeys to a constant energy law. Fast SET pulses require high power; slow SET pulses can be implemented in low power applications. Results may be used for an optimized design of memory cell operating conditions.© 2008 IEEE.
On the RESET-SET transition in phase change memories / Puzzilli, Giuseppina; Irrera, Fernanda; Andrea, Padovani; Paolo, Pavan; Luca, Larcher; Ankur, Arya; Vincenzo Della, Marca; Agostino, Pirovano. - STAMPA. - (2008), pp. 158-161. (Intervento presentato al convegno ESSDERC 2008 - 38th European Solid-State Device Research Conference tenutosi a Edinburgh; Scotland nel 15 September 2008 through 19 September 2008) [10.1109/essderc.2008.4681723].
On the RESET-SET transition in phase change memories
PUZZILLI, Giuseppina;IRRERA, Fernanda
;
2008
Abstract
We characterize SET operation in Phase Change Memories. A measurement procedure aiming to investigate resistance transition from amorphous to crystalline states is shown. Results give interesting insights on the crystallization process of GST material and a simple model is introduced. Crystallization process obeys to a constant energy law. Fast SET pulses require high power; slow SET pulses can be implemented in low power applications. Results may be used for an optimized design of memory cell operating conditions.© 2008 IEEE.| File | Dimensione | Formato | |
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