We characterize SET operation in Phase Change Memories. A measurement procedure aiming to investigate resistance transition from amorphous to crystalline states is shown. Results give interesting insights on the crystallization process of GST material and a simple model is introduced. Crystallization process obeys to a constant energy law. Fast SET pulses require high power; slow SET pulses can be implemented in low power applications. Results may be used for an optimized design of memory cell operating conditions.© 2008 IEEE.

On the RESET-SET transition in phase change memories / Puzzilli, Giuseppina; Irrera, Fernanda; Andrea, Padovani; Paolo, Pavan; Luca, Larcher; Ankur, Arya; Vincenzo Della, Marca; Agostino, Pirovano. - STAMPA. - (2008), pp. 158-161. (Intervento presentato al convegno ESSDERC 2008 - 38th European Solid-State Device Research Conference tenutosi a Edinburgh; Scotland nel 15 September 2008 through 19 September 2008) [10.1109/essderc.2008.4681723].

On the RESET-SET transition in phase change memories

PUZZILLI, Giuseppina;IRRERA, Fernanda
;
2008

Abstract

We characterize SET operation in Phase Change Memories. A measurement procedure aiming to investigate resistance transition from amorphous to crystalline states is shown. Results give interesting insights on the crystallization process of GST material and a simple model is introduced. Crystallization process obeys to a constant energy law. Fast SET pulses require high power; slow SET pulses can be implemented in low power applications. Results may be used for an optimized design of memory cell operating conditions.© 2008 IEEE.
2008
ESSDERC 2008 - 38th European Solid-State Device Research Conference
nonvolatile memories; resistive switching; phase change
04 Pubblicazione in atti di convegno::04b Atto di convegno in volume
On the RESET-SET transition in phase change memories / Puzzilli, Giuseppina; Irrera, Fernanda; Andrea, Padovani; Paolo, Pavan; Luca, Larcher; Ankur, Arya; Vincenzo Della, Marca; Agostino, Pirovano. - STAMPA. - (2008), pp. 158-161. (Intervento presentato al convegno ESSDERC 2008 - 38th European Solid-State Device Research Conference tenutosi a Edinburgh; Scotland nel 15 September 2008 through 19 September 2008) [10.1109/essderc.2008.4681723].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/406535
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