RAO, ROSARIO

RAO, ROSARIO  

DIPARTIMENTO DI INGEGNERIA DELL'INFORMAZIONE, ELETTRONICA E TELECOMUNICAZIONI  

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Titolo Data di pubblicazione Autore(i) File
A Model of High-Frequency Self-Mixing in Double-Barrier Rectifier 2018 Palma, Fabrizio; Rao, R.
A thorough investigation of the progressive reset dynamics in HfO<inf>2</inf>-based resistive switching structures 2015 Lorenzi, Paolo; Rao, Rosario; Irrera, Fernanda; Suñé, J.; Miranda, E.
Advanced Characterization of Metal/High-k Interface 2010 Irrera, Fernanda; Lorenzi, Paolo; Rao, Rosario; R., Simoncini; G., Ghidini; H. D. B., Gottlob; M., Schmidt
Advanced methodology for electrical characterization of metal/high-k interfaces 2014 Rao, Rosario; Lorenzi, Paolo; Irrera, Fernanda
Charge Trapping Nanoelectronic Memories 2009 Lorenzi, Paolo; Rao, Rosario; Palma, Fabrizio; G., Ghidini; Irrera, Fernanda
Charge trapping NonVolatile Memory 2009 Lorenzi, Paolo; Rao, Rosario; Palma, Fabrizio; G., Ghidini; Irrera, Fernanda
CMOS compatible, low temperature, growth of silicon nanowires by microwave nano-susceptors 2018 Palma, F.; Cattaruzza, E.; Rao, R.; Riello, P.
CMOS-Compatible Room-Temperature Rectifier Toward Terahertz Radiation Detection 2016 Varlamava, Volha; De Amicis, Giovanni; Del Monte, Andrea; Perticaroli, Stefano; Rao, Rosario; Palma, Fabrizio
Conductive filament evolution in HfO2 resistive RAM device during constant voltage stress 2015 Lorenzi, Paolo; Rao, Rosario; Irrera, Fernanda
Detrapping dynamics in Al2O3 metal-oxide-semiconductor 2010 Rao, Rosario; Irrera, Fernanda
Developments of the pinned photodiode terahertz rectifier 2016 Varlamava, V.; De Amicis, G.; Del Monte, A.; Rao, R.; Palma, F.
Electrical instability in LaLuO3 based metal-oxide-semiconductor capacitors and role of the metal electrodes 2013 Rao, Rosario; Irrera, Fernanda
Electron-Related Phenomena at the TaN/Al2O3 Interface 2010 Rao, Rosario; Lorenzi, Paolo; G., Ghidini; Palma, Fabrizio; Irrera, Fernanda
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM 2011 C., Cagli; J., Buckley; V., Jousseaume; T., Cabout; A., Salaun; H., Grampeix; J. F., Nodin; H., Feldis; A., Persico; J., Cluzel; Lorenzi, Paolo; L., Massari; Rao, Rosario; Irrera, Fernanda; F., Aussenac; C., Carabasse; M., Coue; P., Calka; E., Martinez; L., Perniola; P., Blaise; Z., Fang; Y. H., Yu; G., Ghibaudo; D., Deleruyelle; M., Bocquet; C., Muller; A., Padovani; O., Pirrotta; L., Vandelli; L., Larcher; G., Reimbold; B., De Salvo
Fast detrapping transients in high-k dielectric films 2009 Rao, Rosario; Irrera, Fernanda
Fast Detrapping Transients in High-k Films 2009 Rao, Rosario; Irrera, Fernanda
Forming kinetics in HfO2-Based RRAM cells 2013 Lorenzi, Paolo; Rao, Rosario; Irrera, Fernanda
Impact of forming pulse geometry and area scaling on forming kinetics and stability of the low resistance state in HfO2-based RRAM cells 2012 Lorenzi, Paolo; Rao, Rosario; Irrera, Fernanda
Impact of the forming conditions and electrode metals on read disturb in HfO2-based RRAM 2013 Lorenzi, Paolo; Rao, Rosario; T., Prifti; Irrera, Fernanda
L-DOPA and freezing of gait in Parkinson's disease: Objective assessment through a wearable wireless system 2018 Suppa, Antonio; Kita, Ardian; Leodori, Giorgio; Zampogna, Alessandro; Nicolini, Ettore; Lorenzi, Paolo; Rao, Rosario; Irrera, Fernanda