An experiment of read disturb is performed on HfO2 based MIM devices designed for resistive memories (RRAM). The experiment elucidates the role of the forming conditions and the electrode materials on the robustness of the low resistance state against electrical disturb. It is performed in three steps: (1) two sets of samples with different electrodes (TiN and Pt) are formed using voltage pulses with different amplitudes; (2) formed samples are subject to constant voltage stress of different entities; (3) the current flowing through the MIM during stress is monitored and processed. © 2013 Elsevier Ltd. All rights reserved.
Impact of the forming conditions and electrode metals on read disturb in HfO2-based RRAM / Lorenzi, Paolo; Rao, Rosario; T., Prifti; Irrera, Fernanda. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 53:9-11(2013), pp. 1203-1207. [10.1016/j.microrel.2013.07.043]
Impact of the forming conditions and electrode metals on read disturb in HfO2-based RRAM
LORENZI, PAOLO;RAO, ROSARIO;IRRERA, Fernanda
2013
Abstract
An experiment of read disturb is performed on HfO2 based MIM devices designed for resistive memories (RRAM). The experiment elucidates the role of the forming conditions and the electrode materials on the robustness of the low resistance state against electrical disturb. It is performed in three steps: (1) two sets of samples with different electrodes (TiN and Pt) are formed using voltage pulses with different amplitudes; (2) formed samples are subject to constant voltage stress of different entities; (3) the current flowing through the MIM during stress is monitored and processed. © 2013 Elsevier Ltd. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
