Developments of the pinned photodiode terahertz rectifier

This paper presents we presents a development of the structure of the pinned photodiode terahertz rectifier, in which the metal whisker of the antenna is separated from the semiconductor by a silane oxide layer, in order to reduce the surface defectiveness. The rectifies is the basic component of an image detection system based on the structure of actual CMOS image detectors. The structure combines a nano-antenna, fabricated on the top of a standard image sensor, the rectifier, and the readout electronics. The rectifier device proposed has vertical extension of some tenths of nanometers, can be created at the foot of the nano-whisker at the end of the terahertz antenna, above the storage well.