A methodology for the quantitative electrical characterization of defects at metal/high-k interfaces is proposed. It includes modelling of trapping in the oxide, fit of experiments, and calculation of the system band diagram after trapping. As a result, the defect concentrations and energy levels are extracted. The methodology is demonstrated on metal-oxide-semiconductor systems, but its results can be extended on whatever structure containing an interface between a metal and a high-k dielectric film. (C) 2014 American Vacuum Society.
Advanced methodology for electrical characterization of metal/high-k interfaces / Rao, Rosario; Lorenzi, Paolo; Irrera, Fernanda. - In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B. - ISSN 1071-1023. - 32:3(2014), p. 03D120. [10.1116/1.4868366]
Advanced methodology for electrical characterization of metal/high-k interfaces
RAO, ROSARIO;LORENZI, PAOLO;IRRERA, Fernanda
2014
Abstract
A methodology for the quantitative electrical characterization of defects at metal/high-k interfaces is proposed. It includes modelling of trapping in the oxide, fit of experiments, and calculation of the system band diagram after trapping. As a result, the defect concentrations and energy levels are extracted. The methodology is demonstrated on metal-oxide-semiconductor systems, but its results can be extended on whatever structure containing an interface between a metal and a high-k dielectric film. (C) 2014 American Vacuum Society.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
