In this work key aspects of the electroforming in RRAM cells with HfO2 oxide and Pt electrodes are addressed. Specifically, transient measurements were performed on extremely short timescales to characterize systematically the forming time and the resistance after forming as a function of the voltage pulse geometry and the device area. © 2012 IEEE.
Impact of forming pulse geometry and area scaling on forming kinetics and stability of the low resistance state in HfO2-based RRAM cells / Lorenzi, Paolo; Rao, Rosario; Irrera, Fernanda. - STAMPA. - (2012), pp. 1-4. (Intervento presentato al convegno 4th IEEE International Memory Workshop (IMW) tenutosi a Milano; Italy nel MAY 20-23, 2012) [10.1109/imw.2012.6213621].
Impact of forming pulse geometry and area scaling on forming kinetics and stability of the low resistance state in HfO2-based RRAM cells
LORENZI, PAOLO;RAO, ROSARIO;IRRERA, Fernanda
2012
Abstract
In this work key aspects of the electroforming in RRAM cells with HfO2 oxide and Pt electrodes are addressed. Specifically, transient measurements were performed on extremely short timescales to characterize systematically the forming time and the resistance after forming as a function of the voltage pulse geometry and the device area. © 2012 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
