Trapping in LaLuO3 MOS capacitors with different metal nitride gates is investigated for the first time. The instability of the flat band voltage during electrical stress is monitored systematically with the pulsed C-V technique as function of stress time and voltage. Ad-hoc experiments aiming to force electron trapping in sites close to the metal/high-k interface are performed, and the role of different metal nitride gates is discussed. Trapping exhibits a power-law dependence on stress time in any investigated condition. Interpolation of the experimental data with an analytical model of trapping allows extraction of the energy level of traps involved in the capture mechanism. (C) 2013 American Vacuum Society. [http://dx.doi.org/10.1116/1.4774105]
Electrical instability in LaLuO3 based metal-oxide-semiconductor capacitors and role of the metal electrodes / Rao, Rosario; Irrera, Fernanda. - In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B. - ISSN 1071-1023. - STAMPA. - 31:1(2013), p. 01A116. [10.1116/1.4774105]
Electrical instability in LaLuO3 based metal-oxide-semiconductor capacitors and role of the metal electrodes
RAO, ROSARIO;IRRERA, Fernanda
2013
Abstract
Trapping in LaLuO3 MOS capacitors with different metal nitride gates is investigated for the first time. The instability of the flat band voltage during electrical stress is monitored systematically with the pulsed C-V technique as function of stress time and voltage. Ad-hoc experiments aiming to force electron trapping in sites close to the metal/high-k interface are performed, and the role of different metal nitride gates is discussed. Trapping exhibits a power-law dependence on stress time in any investigated condition. Interpolation of the experimental data with an analytical model of trapping allows extraction of the energy level of traps involved in the capture mechanism. (C) 2013 American Vacuum Society. [http://dx.doi.org/10.1116/1.4774105]I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
