In this paper, key aspects of the electroforming in resistive-RAM cells with HfO2 are addressed. Specifically, transient measurements were performed on extremely short timescales to characterize systematically the forming time as a function of the voltage pulse amplitude, temperature, electrode materials, and device area. An analytical model was developed, accounting for the investigated experimental parameters. Impact of the forming (and SET) waveform on read disturb is also investigated. © 1963-2012 IEEE.

Forming kinetics in HfO2-Based RRAM cells / Lorenzi, Paolo; Rao, Rosario; Irrera, Fernanda. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 60:1(2013), pp. 438-443. [10.1109/ted.2012.2227324]

Forming kinetics in HfO2-Based RRAM cells

LORENZI, PAOLO;RAO, ROSARIO;IRRERA, Fernanda
2013

Abstract

In this paper, key aspects of the electroforming in resistive-RAM cells with HfO2 are addressed. Specifically, transient measurements were performed on extremely short timescales to characterize systematically the forming time as a function of the voltage pulse amplitude, temperature, electrode materials, and device area. An analytical model was developed, accounting for the investigated experimental parameters. Impact of the forming (and SET) waveform on read disturb is also investigated. © 1963-2012 IEEE.
2013
area scaling; electrodes; forming kinetics; forming pulse amplitude; hfo2; mim device; read disturb; resistive ram (rram); temperature
01 Pubblicazione su rivista::01a Articolo in rivista
Forming kinetics in HfO2-Based RRAM cells / Lorenzi, Paolo; Rao, Rosario; Irrera, Fernanda. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 60:1(2013), pp. 438-443. [10.1109/ted.2012.2227324]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/514613
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