In this paper, key aspects of the electroforming in resistive-RAM cells with HfO2 are addressed. Specifically, transient measurements were performed on extremely short timescales to characterize systematically the forming time as a function of the voltage pulse amplitude, temperature, electrode materials, and device area. An analytical model was developed, accounting for the investigated experimental parameters. Impact of the forming (and SET) waveform on read disturb is also investigated. © 1963-2012 IEEE.
Forming kinetics in HfO2-Based RRAM cells / Lorenzi, Paolo; Rao, Rosario; Irrera, Fernanda. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 60:1(2013), pp. 438-443. [10.1109/ted.2012.2227324]
Forming kinetics in HfO2-Based RRAM cells
LORENZI, PAOLO;RAO, ROSARIO;IRRERA, Fernanda
2013
Abstract
In this paper, key aspects of the electroforming in resistive-RAM cells with HfO2 are addressed. Specifically, transient measurements were performed on extremely short timescales to characterize systematically the forming time as a function of the voltage pulse amplitude, temperature, electrode materials, and device area. An analytical model was developed, accounting for the investigated experimental parameters. Impact of the forming (and SET) waveform on read disturb is also investigated. © 1963-2012 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
