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LORENZI, PAOLO

LORENZI, PAOLO  

DIPARTIMENTO DI INGEGNERIA DELL'INFORMAZIONE, ELETTRONICA E TELECOMUNICAZIONI  

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Risultati 1 - 20 di 23 (tempo di esecuzione: 0.04 secondi).
Titolo Data di pubblicazione Autore(i) File
A thorough investigation of the progressive reset dynamics in HfO<inf>2</inf>-based resistive switching structures 2015 Lorenzi, Paolo; Rao, Rosario; Irrera, Fernanda; Suñé, J.; Miranda, E.
Advanced Characterization of Metal/High-k Interface 2010 Irrera, Fernanda; Lorenzi, Paolo; Rao, Rosario; R., Simoncini; G., Ghidini; H. D. B., Gottlob; M., Schmidt
Advanced methodology for electrical characterization of metal/high-k interfaces 2014 Rao, Rosario; Lorenzi, Paolo; Irrera, Fernanda
Charge Trapping Nanoelectronic Memories 2009 Lorenzi, Paolo; Rao, Rosario; Palma, Fabrizio; G., Ghidini; Irrera, Fernanda
Charge trapping NonVolatile Memory 2009 Lorenzi, Paolo; Rao, Rosario; Palma, Fabrizio; G., Ghidini; Irrera, Fernanda
Conductive filament evolution in HfO2 resistive RAM device during constant voltage stress 2015 Lorenzi, Paolo; Rao, Rosario; Irrera, Fernanda
Electron-Related Phenomena at the TaN/Al2O3 Interface 2010 Rao, Rosario; Lorenzi, Paolo; G., Ghidini; Palma, Fabrizio; Irrera, Fernanda
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM 2011 C., Cagli; J., Buckley; V., Jousseaume; T., Cabout; A., Salaun; H., Grampeix; J. F., Nodin; H., Feldis; A., Persico; J., Cluzel; Lorenzi, Paolo; L., Massari; Rao, Rosario; Irrera, Fernanda; F., Aussenac; C., Carabasse; M., Coue; P., Calka; E., Martinez; L., Perniola; P., Blaise; Z., Fang; Y. H., Yu; G., Ghibaudo; D., Deleruyelle; M., Bocquet; C., Muller; A., Padovani; O., Pirrotta; L., Vandelli; L., Larcher; G., Reimbold; B., De Salvo
Forming kinetics in HfO2-Based RRAM cells 2013 Lorenzi, Paolo; Rao, Rosario; Irrera, Fernanda
Impact of forming pulse geometry and area scaling on forming kinetics and stability of the low resistance state in HfO2-based RRAM cells 2012 Lorenzi, Paolo; Rao, Rosario; Irrera, Fernanda
Impact of the forming conditions and electrode metals on read disturb in HfO2-based RRAM 2013 Lorenzi, Paolo; Rao, Rosario; T., Prifti; Irrera, Fernanda
L-DOPA and freezing of gait in Parkinson's disease: Objective assessment through a wearable wireless system 2018 Suppa, Antonio; Kita, Ardian; Leodori, Giorgio; Zampogna, Alessandro; Nicolini, Ettore; Lorenzi, Paolo; Rao, Rosario; Irrera, Fernanda
Memristor based neuromorphic circuit for visual pattern recognition 2015 Lorenzi, Paolo; Sucre, V.; Romano, Giulio; Rao, Rosario; Irrera, Fernanda
Mobile devices for the real-time detection of specific human motion disorders 2016 Lorenzi, Paolo; Rao, Rosario; Romano, Giulio; Kita, Ardian; Irrera, Fernanda
Model of reversible breakdown in HfO2 based on fractal patterns 2015 Lorenzi, Paolo; Rao, Rosario; Romano, Giulio; Irrera, Fernanda
Nanometric Resistive Memories for the next technology node 2011 Lorenzi, Paolo; Rao, Rosario; Irrera, Fernanda; J., Buckley; C., Cagli; B., De Salvo
Reliable and robust detection of freezing of gait episodes with wearable electronic devices 2017 Kita, Ardian; Lorenzi, Paolo; Rao, Rosario; Irrera, Fernanda
Role of the electrode metal, temperature and waveform geometry on SET and RESET in HfO2-based RRAM 1R-cells: experimental aspects 2015 Lorenzi, Paolo; Rao, Rosario; Irrera, Fernanda
Smart Sensing System for the Detection of Specific Human Motion Symptoms of the Parkinson’s Disease 2016 Irrera, Fernanda; Berardelli, Alfredo; Bologna, Matteo; Suppa, Antonio; Parisi, R.; Rao, Rosario; Romano, G.; Lorenzi, Paolo; Kita, Ardian
Smart sensing systems for the detection of human motion disorders 2015 Lorenzi, Paolo; Rao, Rosario; Romano, Giulio; Kita, Ardian; Serpa, M; Filesi, F; Parisi, R; Suppa, Antonio; Bologna, Matteo; Berardelli, Alfredo; Irrera, Fernanda