Sfoglia per Autore
Optical Link for Digital Transmission using Porous Silicon Light Emitting Diode
2000 Balucani, Marco; G., Lamedica; DE CESARE, Giampiero; Caputo, Domenico; Ferrari, Aldo
Opto-electronics Silicon On Insulator integrated circuits by porous silicon technology
2000 Balucani, Marco; G., Lamedica; V., Bondarenko; A., Ferrari
Oxidized porous silicon waveguides losses
2000 G., Lamedica; Balucani, Marco; V., Bondarenko; A., Ferrari
Formation features of deposits during a cathode treatment of porous silicon in aqueous solutions of erbium salts
2000 V., Ptrovich; S., Yolchek; L., Dolgyi; V., Yakovtseva; V., Bondarenko; Balucani, Marco; G., Lamedica; Ferrari, Aldo; T. M., Benson; H. F., Arrand
Similarity relation for I-V characteristics of FETs with different channel shape
2000 V. N., Dobrovolsky; Balucani, Marco; Ferrari, Aldo
The influence of a-Si:H buffer layers on the properties of CNx materials
2000 B., Mitu; GHEORGHE H., Dinescu; E., Aldea; Maria, Dinescu; A., Ferrari; Balucani, Marco; G., Lamedica
Investigation of morphology of porous silicon formed on N+ type silicon
2000 G., Lamedica; Balucani, Marco; V., Bondarenko; L., Franchina; L., Dolgyi; V., Yakovtseva; Ferrari, Aldo
Porus Silicon: a Buffer Layer for PbS Heteroepitaxy
2000 Yakovtseva, V.; Vorozov, N.; Dolgyi, L.; Levchenko, V.; Postnova, L.; Balucani, Marco; Bondarenko, V.; Lamedica, G.; Ferrara, Vincenzo; Ferrari, Aldo
PROCESS FOR THE FORMING OF ISOLATION LAYERS OF A PREDETERMINED THICKNESS IN SEMICONDUCTOR WAFERS FOR THE MANUFACTURING OF INTEGRATED CIRCUITS
2001 Balucani, Marco; Bondarenko, V; Dolgyi, L; Ferrari, A; Lamedica, G; Yakovtseva, V.
Er-doped Oxidized Porous Silicon Waveguides
2001 Balucani, Marco; V., Bondarenko; G., Lamedica; A., Ferrari; L., Dolgyi; N., Vorozov; V., Yakovtseva; S., Volchek; V., Petrovich; N., Kazuchits
PROCESS FOR THE TWO-STEP SELECTIVE ANODIZING OF A SEMICONDUCTOR LAYER FOR FORMING POROUS SILICON
2001 Balucani, Marco; Bondarenko, V; Dolgyi, L; Ferrari, A; Lamedica, G; Yakovtseva, V.
PROCESS FOR FORMING STRUCTURE WITH DIFFERENT DOPED REGIONS, SHOWING A HYPERFINE TRANSITION REGION, FOR FORMING POROUS SILICON
2001 Balucani, Marco; Bondarenko, V; Dolgyi, L; Ferrari, A; Lamedica, G; Yakovtseva, V.
Formation of intermediate SiCN interlayer during deposition of CNx on a-Si : H or a-SiC : H thin films
2001 B., Mitu; G., Dinescu; E., Budianu; Ferrari, Aldo; Balucani, Marco; G., La Medica; A., Dauscher; M., Dinescu
Multilayer Structures Induced by Plasma and Laser Beam Treatments on a Si:H and a-SiC:H thin films
2001 B., Mitu; G., Dinescu; M., Dinescu; A., Ferrari; Balucani, Marco; G., Lamedica; A. P., Dementjiev
Oxidized Porous Silicon Based SOI: untapped resources
2002 Bondarenko, V; Yakovtseva, V; Dolgyi, L; Vorozov, N; Balucani, Marco; Lamedica, G; Ferrari, Aldo
Properties of ZrO2 thin films prepared by laser ablation
2002 I., Vrejoiu; D. G., Matei; M., Morar; G., Epurescu; A., Ferrari; Balucani, Marco; G., Lamedica; G., Dinescu; C., Grigoriu; M., Dinescu
X-ray diffractometry of Si epilayers grown on porous silicon
2002 G., Lamedica; Balucani, Marco; A., Ferrari; V., Bondarenko; V., Yakovtseva; L., Dolgyi
Microthrusters in silicon for aerospace application
2002 Lamedica, G.; Balucani, Marco; Ferrari, Aldo; Tromboni, P. D.
Gettering Technology Based on Porous Silicon
2002 G., LA MEDICA; Balucani, Marco; Ferrari, Aldo; V., Bondarenco; V., Yakovtseva; L., Dolgyi
Similarity relation for I-V characteristics of FETs with different channel shape
2002 Balucani, Marco; DOBROVOLSKY V., N; Ferrari, A.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Optical Link for Digital Transmission using Porous Silicon Light Emitting Diode | 2000 | Balucani, Marco; G., Lamedica; DE CESARE, Giampiero; Caputo, Domenico; Ferrari, Aldo | |
Opto-electronics Silicon On Insulator integrated circuits by porous silicon technology | 2000 | Balucani, Marco; G., Lamedica; V., Bondarenko; A., Ferrari | |
Oxidized porous silicon waveguides losses | 2000 | G., Lamedica; Balucani, Marco; V., Bondarenko; A., Ferrari | |
Formation features of deposits during a cathode treatment of porous silicon in aqueous solutions of erbium salts | 2000 | V., Ptrovich; S., Yolchek; L., Dolgyi; V., Yakovtseva; V., Bondarenko; Balucani, Marco; G., Lamedica; Ferrari, Aldo; T. M., Benson; H. F., Arrand | |
Similarity relation for I-V characteristics of FETs with different channel shape | 2000 | V. N., Dobrovolsky; Balucani, Marco; Ferrari, Aldo | |
The influence of a-Si:H buffer layers on the properties of CNx materials | 2000 | B., Mitu; GHEORGHE H., Dinescu; E., Aldea; Maria, Dinescu; A., Ferrari; Balucani, Marco; G., Lamedica | |
Investigation of morphology of porous silicon formed on N+ type silicon | 2000 | G., Lamedica; Balucani, Marco; V., Bondarenko; L., Franchina; L., Dolgyi; V., Yakovtseva; Ferrari, Aldo | |
Porus Silicon: a Buffer Layer for PbS Heteroepitaxy | 2000 | Yakovtseva, V.; Vorozov, N.; Dolgyi, L.; Levchenko, V.; Postnova, L.; Balucani, Marco; Bondarenko, V.; Lamedica, G.; Ferrara, Vincenzo; Ferrari, Aldo | |
PROCESS FOR THE FORMING OF ISOLATION LAYERS OF A PREDETERMINED THICKNESS IN SEMICONDUCTOR WAFERS FOR THE MANUFACTURING OF INTEGRATED CIRCUITS | 2001 | Balucani, Marco; Bondarenko, V; Dolgyi, L; Ferrari, A; Lamedica, G; Yakovtseva, V. | |
Er-doped Oxidized Porous Silicon Waveguides | 2001 | Balucani, Marco; V., Bondarenko; G., Lamedica; A., Ferrari; L., Dolgyi; N., Vorozov; V., Yakovtseva; S., Volchek; V., Petrovich; N., Kazuchits | |
PROCESS FOR THE TWO-STEP SELECTIVE ANODIZING OF A SEMICONDUCTOR LAYER FOR FORMING POROUS SILICON | 2001 | Balucani, Marco; Bondarenko, V; Dolgyi, L; Ferrari, A; Lamedica, G; Yakovtseva, V. | |
PROCESS FOR FORMING STRUCTURE WITH DIFFERENT DOPED REGIONS, SHOWING A HYPERFINE TRANSITION REGION, FOR FORMING POROUS SILICON | 2001 | Balucani, Marco; Bondarenko, V; Dolgyi, L; Ferrari, A; Lamedica, G; Yakovtseva, V. | |
Formation of intermediate SiCN interlayer during deposition of CNx on a-Si : H or a-SiC : H thin films | 2001 | B., Mitu; G., Dinescu; E., Budianu; Ferrari, Aldo; Balucani, Marco; G., La Medica; A., Dauscher; M., Dinescu | |
Multilayer Structures Induced by Plasma and Laser Beam Treatments on a Si:H and a-SiC:H thin films | 2001 | B., Mitu; G., Dinescu; M., Dinescu; A., Ferrari; Balucani, Marco; G., Lamedica; A. P., Dementjiev | |
Oxidized Porous Silicon Based SOI: untapped resources | 2002 | Bondarenko, V; Yakovtseva, V; Dolgyi, L; Vorozov, N; Balucani, Marco; Lamedica, G; Ferrari, Aldo | |
Properties of ZrO2 thin films prepared by laser ablation | 2002 | I., Vrejoiu; D. G., Matei; M., Morar; G., Epurescu; A., Ferrari; Balucani, Marco; G., Lamedica; G., Dinescu; C., Grigoriu; M., Dinescu | |
X-ray diffractometry of Si epilayers grown on porous silicon | 2002 | G., Lamedica; Balucani, Marco; A., Ferrari; V., Bondarenko; V., Yakovtseva; L., Dolgyi | |
Microthrusters in silicon for aerospace application | 2002 | Lamedica, G.; Balucani, Marco; Ferrari, Aldo; Tromboni, P. D. | |
Gettering Technology Based on Porous Silicon | 2002 | G., LA MEDICA; Balucani, Marco; Ferrari, Aldo; V., Bondarenco; V., Yakovtseva; L., Dolgyi | |
Similarity relation for I-V characteristics of FETs with different channel shape | 2002 | Balucani, Marco; DOBROVOLSKY V., N; Ferrari, A. |
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