In the present work, we report on the heteroepitaxial growth of PbS on porous silicon (PS). Epitaxial PbS films were grown by MBE on the surface of PS formed on the n(+)-type silicon (111) substrate. The Films were comparable with films grown on BaF2 substrates. Beneficial influence of a PS buffer layer on the structure and properties of PbS epitaxial films was supported by implementation of sensitive Schottky-harrier photodiodes fabricated in these films.

Porus Silicon: a Buffer Layer for PbS Heteroepitaxy / Yakovtseva, V.; Vorozov, N.; Dolgyi, L.; Levchenko, V.; Postnova, L.; Balucani, Marco; Bondarenko, V.; Lamedica, G.; Ferrara, Vincenzo; Ferrari, Aldo. - In: PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH. - ISSN 0031-8965. - STAMPA. - 182:(2000), pp. 195-199. [10.1002/1521-396X(200011)]

Porus Silicon: a Buffer Layer for PbS Heteroepitaxy

BALUCANI, Marco;FERRARA, Vincenzo;FERRARI, Aldo
2000

Abstract

In the present work, we report on the heteroepitaxial growth of PbS on porous silicon (PS). Epitaxial PbS films were grown by MBE on the surface of PS formed on the n(+)-type silicon (111) substrate. The Films were comparable with films grown on BaF2 substrates. Beneficial influence of a PS buffer layer on the structure and properties of PbS epitaxial films was supported by implementation of sensitive Schottky-harrier photodiodes fabricated in these films.
2000
01 Pubblicazione su rivista::01a Articolo in rivista
Porus Silicon: a Buffer Layer for PbS Heteroepitaxy / Yakovtseva, V.; Vorozov, N.; Dolgyi, L.; Levchenko, V.; Postnova, L.; Balucani, Marco; Bondarenko, V.; Lamedica, G.; Ferrara, Vincenzo; Ferrari, Aldo. - In: PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH. - ISSN 0031-8965. - STAMPA. - 182:(2000), pp. 195-199. [10.1002/1521-396X(200011)]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/76336
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