ZrO2 thin films have been prepared by laser ablation of Zr or ZrO2 targets in oxygen reactive atmosphere. The influence of the deposition parameters as oxygen pressure and target composition. on the structure and morphology of the deposited layers has been studied. Scanning electron microscopy, secondary ion mass spectroscopy and dielectric constant measurements have been performed to characterize the deposited layers. Dielectric constant values in the, range 15-20 and low losses were evidenced for samples prepared in a narrow range of experimental conditions. (C) 2002 Elsevier Science Ltd. All rights reserved.

Properties of ZrO2 thin films prepared by laser ablation / I., Vrejoiu; D. G., Matei; M., Morar; G., Epurescu; A., Ferrari; Balucani, Marco; G., Lamedica; G., Dinescu; C., Grigoriu; M., Dinescu. - In: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. - ISSN 1369-8001. - STAMPA. - 5:2-3(2002), pp. 253-257. (Intervento presentato al convegno Symposium on Advanced Materials for Microelectronics held at the Spring Meeting of the E-MRS tenutosi a STRASBOURG, FRANCE nel JUN 18-21, 2002) [10.1016/s1369-8001(02)00083-5].

Properties of ZrO2 thin films prepared by laser ablation

BALUCANI, Marco;
2002

Abstract

ZrO2 thin films have been prepared by laser ablation of Zr or ZrO2 targets in oxygen reactive atmosphere. The influence of the deposition parameters as oxygen pressure and target composition. on the structure and morphology of the deposited layers has been studied. Scanning electron microscopy, secondary ion mass spectroscopy and dielectric constant measurements have been performed to characterize the deposited layers. Dielectric constant values in the, range 15-20 and low losses were evidenced for samples prepared in a narrow range of experimental conditions. (C) 2002 Elsevier Science Ltd. All rights reserved.
2002
ablation film deposition; dielectric constant; laser ablation; microscopy; zro2
01 Pubblicazione su rivista::01a Articolo in rivista
Properties of ZrO2 thin films prepared by laser ablation / I., Vrejoiu; D. G., Matei; M., Morar; G., Epurescu; A., Ferrari; Balucani, Marco; G., Lamedica; G., Dinescu; C., Grigoriu; M., Dinescu. - In: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. - ISSN 1369-8001. - STAMPA. - 5:2-3(2002), pp. 253-257. (Intervento presentato al convegno Symposium on Advanced Materials for Microelectronics held at the Spring Meeting of the E-MRS tenutosi a STRASBOURG, FRANCE nel JUN 18-21, 2002) [10.1016/s1369-8001(02)00083-5].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/102514
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