X-ray double-crystal diffractometry was used to measure lattice deformation of porous silicon (PS) and Si epitaxial layers grown on PS. PS layers 1-10 μm in thickness and 15-65% in porosity were formed by anodization of n+-type Sb doped Si wafers in a 12% HF aqueous solution. Lattice deformations of both PS and epitaxial layers are shown to strongly depend on PS porosity. Grown on uniform PS 40-60% in porosity, the epilayers, single-crystal as they are, display high lattice deformation and defect density. Epilayers grown on two-layer PS are comparable with the films grown on the n+-type single-crystal Si substrate. © 2002 Published by Elsevier Science B.V.
X-ray diffractometry of Si epilayers grown on porous silicon / G., Lamedica; Balucani, Marco; A., Ferrari; V., Bondarenko; V., Yakovtseva; L., Dolgyi. - In: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. - ISSN 0921-5107. - STAMPA. - 91-92:(2002), pp. 445-448. [10.1016/s0921-5107(01)00997-7]
X-ray diffractometry of Si epilayers grown on porous silicon
BALUCANI, Marco;
2002
Abstract
X-ray double-crystal diffractometry was used to measure lattice deformation of porous silicon (PS) and Si epitaxial layers grown on PS. PS layers 1-10 μm in thickness and 15-65% in porosity were formed by anodization of n+-type Sb doped Si wafers in a 12% HF aqueous solution. Lattice deformations of both PS and epitaxial layers are shown to strongly depend on PS porosity. Grown on uniform PS 40-60% in porosity, the epilayers, single-crystal as they are, display high lattice deformation and defect density. Epilayers grown on two-layer PS are comparable with the films grown on the n+-type single-crystal Si substrate. © 2002 Published by Elsevier Science B.V.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
