The expression is obtained, that allows applying the theory of field effect transistors (FET) with a rectangular channel to transistor with any channel shape. It is valid for FET of all types: silicon on insulator (SOI) MOSFET, bulk MOSFET, JFET, and MESFET.
Similarity relation for I-V characteristics of FETs with different channel shape / V. N., Dobrovolsky; Balucani, Marco; Ferrari, Aldo. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 44:(2000), pp. 1865-1867. [10.1016/S0038-1101(00)00142-8]
Similarity relation for I-V characteristics of FETs with different channel shape
BALUCANI, Marco;FERRARI, Aldo
2000
Abstract
The expression is obtained, that allows applying the theory of field effect transistors (FET) with a rectangular channel to transistor with any channel shape. It is valid for FET of all types: silicon on insulator (SOI) MOSFET, bulk MOSFET, JFET, and MESFET.File allegati a questo prodotto
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